Sensors 2010, 10(3), 1782-1797; doi:10.3390/s100301782

Wide Dynamic Range CMOS Potentiostat for Amperometric Chemical Sensor

1email, 1email, 2,* email and 1email
Received: 1 December 2009; in revised form: 1 February 2010 / Accepted: 2 February 2010 / Published: 4 March 2010
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract: Presented is a single-ended potentiostat topology with a new interface connection between sensor electrodes and potentiostat circuit to avoid deviation of cell voltage and linearly convert the cell current into voltage signal. Additionally, due to the increased harmonic distortion quantity when detecting low-level sensor current, the performance of potentiostat linearity which causes the detectable current and dynamic range to be limited is relatively decreased. Thus, to alleviate these irregularities, a fully-differential potentiostat is designed with a wide output voltage swing compared to single-ended potentiostat. Two proposed potentiostats were implemented using TSMC 0.18-μm CMOS process for biomedical application. Measurement results show that the fully differential potentiostat performs relatively better in terms of linearity when measuring current from 500 ºpA to 10 uA. Besides, the dynamic range value can reach a value of 86 dB.
Keywords: potentiostat; dynamic range; amperometric sensor; fully differential; transimpedance
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MDPI and ACS Style

Wang, W.-S.; Kuo, W.-T.; Huang, H.-Y.; Luo, C.-H. Wide Dynamic Range CMOS Potentiostat for Amperometric Chemical Sensor. Sensors 2010, 10, 1782-1797.

AMA Style

Wang W-S, Kuo W-T, Huang H-Y, Luo C-H. Wide Dynamic Range CMOS Potentiostat for Amperometric Chemical Sensor. Sensors. 2010; 10(3):1782-1797.

Chicago/Turabian Style

Wang, Wei-Song; Kuo, Wei-Ting; Huang, Hong-Yi; Luo, Ching-Hsing. 2010. "Wide Dynamic Range CMOS Potentiostat for Amperometric Chemical Sensor." Sensors 10, no. 3: 1782-1797.

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