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Sensors 2010, 10(11), 10413-10434; doi:10.3390/s101110413

Using a Floating-Gate MOS Transistor as a Transducer in a MEMS Gas Sensing System

* ,
CINVESTAV-IPN, Electrical Engineering Department, Av. IPN No. 2508, Col. San Pedro Zacatenco, Mexico, D.F. 07360, Mexico
* Author to whom correspondence should be addressed.
Received: 30 September 2010 / Revised: 28 October 2010 / Accepted: 10 November 2010 / Published: 18 November 2010
(This article belongs to the Special Issue Gas Sensors - 2010)
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Floating-gate MOS transistors have been widely used in diverse analog and digital applications. One of these is as a charge sensitive device in sensors for pH measurement in solutions or using gates with metals like Pd or Pt for hydrogen sensing. Efforts are being made to monolithically integrate sensors together with controlling and signal processing electronics using standard technologies. This can be achieved with the demonstrated compatibility between available CMOS technology and MEMS technology. In this paper an in-depth analysis is done regarding the reliability of floating-gate MOS transistors when charge produced by a chemical reaction between metallic oxide thin films with either reducing or oxidizing gases is present. These chemical reactions need temperatures around 200 °C or higher to take place, so thermal insulation of the sensing area must be assured for appropriate operation of the electronics at room temperature. The operation principle of the proposal here presented is confirmed by connecting the gate of a conventional MOS transistor in series with a Fe2O3 layer. It is shown that an electrochemical potential is present on the ferrite layer when reacting with propane.
Keywords: floating-gate MOSFET; MEMS; gas sensor floating-gate MOSFET; MEMS; gas sensor
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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Reyes Barranca, M.A.; Mendoza-Acevedo, S.; Flores-Nava, L.M.; Avila-García, A.; Vazquez-Acosta, E.N.; Moreno-Cadenas, J.A.; Casados-Cruz, G. Using a Floating-Gate MOS Transistor as a Transducer in a MEMS Gas Sensing System. Sensors 2010, 10, 10413-10434.

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