Hermetic Cavities Using Gold Wafer Level Thermocompression Bonding†
AbstractThis paper presents the study of gold/gold thermocompression bonding at silicon wafer level. The first samples contains sealing rings and electrical pads, and are characterized on pull, and shear test showing bond strength similar to silicon/glass anodic bonding (10 MPa–80 MPa). A sealed cavity and a piezoresistor on a 30 µm-thick silicon membrane are added in the second samples. Helium test, membrane deflection and piezoresistor signal monitoring after aging 14 days at 250 °C confirm the vacuum stability inside the cavity after bonding.
Share & Cite This Article
Charlot, S.; Pons, P.; Dilhan, M.; Vallet, I.; Brida, S. Hermetic Cavities Using Gold Wafer Level Thermocompression Bonding. Proceedings 2017, 1, 607.
Charlot S, Pons P, Dilhan M, Vallet I, Brida S. Hermetic Cavities Using Gold Wafer Level Thermocompression Bonding. Proceedings. 2017; 1(4):607.Chicago/Turabian Style
Charlot, Samuel; Pons, Patrick; Dilhan, Monique; Vallet, Isabelle; Brida, Sebastiano. 2017. "Hermetic Cavities Using Gold Wafer Level Thermocompression Bonding." Proceedings 1, no. 4: 607.
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.