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Proceedings 2017, 1(4), 607; doi:10.3390/proceedings1040607

Hermetic Cavities Using Gold Wafer Level Thermocompression Bonding

1
LAAS-CNRS, Université de Toulouse, CNRS, 31077 Toulouse, France
2
Company Esterline, 18941 Bourges, France
Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.
*
Author to whom correspondence should be addressed.
Published: 24 August 2017
Download PDF [1042 KB, uploaded 13 October 2017]

Abstract

This paper presents the study of gold/gold thermocompression bonding at silicon wafer level. The first samples contains sealing rings and electrical pads, and are characterized on pull, and shear test showing bond strength similar to silicon/glass anodic bonding (10 MPa–80 MPa). A sealed cavity and a piezoresistor on a 30 µm-thick silicon membrane are added in the second samples. Helium test, membrane deflection and piezoresistor signal monitoring after aging 14 days at 250 °C confirm the vacuum stability inside the cavity after bonding.
Keywords: wafer bonding; thermocompression; hermetic sealing wafer bonding; thermocompression; hermetic sealing
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Charlot, S.; Pons, P.; Dilhan, M.; Vallet, I.; Brida, S. Hermetic Cavities Using Gold Wafer Level Thermocompression Bonding. Proceedings 2017, 1, 607.

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