Pt-AlGaN/GaN HEMT-Sensor for Hydrogen Sulfide (H2S) Detection†
AbstractAlGaN/GaN high electron mobility transistor (HEMT)-sensor with a catalytic Pt-gate is fabricated and tested for toxic H2S gas detection. AlGaN/GaN was chosen to extend the sensor detection range and to be able to operate at temperatures beyond those allowed by state-of-art Si-FET sensors. Testing was performed using a gas mixing apparatus in dry synthetic air ambient. High sensitivity, ΔI/I0, 8% for 80 ppm and 0.23% for 0.5 ppm H2S/air, is achieved at a temperature of 250 °C, with a corresponding ΔI of 617 μA and 18 μA, respectively, indicating suitability of the proposed sensor for industrial gas safety detectors.
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Sokolovskij, R.; Iervolino, E.; Zhao, C.; Santagata, F.; Wang, F.; Yu, H.; Sarro, P.M.; Zhang, G.Q. Pt-AlGaN/GaN HEMT-Sensor for Hydrogen Sulfide (H2S) Detection. Proceedings 2017, 1, 463.
Sokolovskij R, Iervolino E, Zhao C, Santagata F, Wang F, Yu H, Sarro PM, Zhang GQ. Pt-AlGaN/GaN HEMT-Sensor for Hydrogen Sulfide (H2S) Detection. Proceedings. 2017; 1(4):463.Chicago/Turabian Style
Sokolovskij, Robert; Iervolino, Elina; Zhao, Changhui; Santagata, Fabio; Wang, Fei; Yu, Hongyu; Sarro, Pasqualina M.; Zhang, Guo Qi. 2017. "Pt-AlGaN/GaN HEMT-Sensor for Hydrogen Sulfide (H2S) Detection." Proceedings 1, no. 4: 463.
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