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Proceedings 2017, 1(4), 463; doi:10.3390/proceedings1040463

Pt-AlGaN/GaN HEMT-Sensor for Hydrogen Sulfide (H2S) Detection

1
Beijing Research Center, Delft University of Technology, Beijing, China
2
Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
3
Microelectronics Department, Delft University of Technology, Delft, The Netherlands
Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.
Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.
*
Author to whom correspondence should be addressed.
Published: 8 August 2017
Download PDF [544 KB, uploaded 5 September 2017]

Abstract

AlGaN/GaN high electron mobility transistor (HEMT)-sensor with a catalytic Pt-gate is fabricated and tested for toxic H2S gas detection. AlGaN/GaN was chosen to extend the sensor detection range and to be able to operate at temperatures beyond those allowed by state-of-art Si-FET sensors. Testing was performed using a gas mixing apparatus in dry synthetic air ambient. High sensitivity, ΔI/I0, 8% for 80 ppm and 0.23% for 0.5 ppm H2S/air, is achieved at a temperature of 250 °C, with a corresponding ΔI of 617 μA and 18 μA, respectively, indicating suitability of the proposed sensor for industrial gas safety detectors.
Keywords: AlGaN; GaN; gas sensor; HEMT; hydrogen sulfide; H2S; high temperature; 2DEG AlGaN; GaN; gas sensor; HEMT; hydrogen sulfide; H2S; high temperature; 2DEG
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Sokolovskij, R.; Iervolino, E.; Zhao, C.; Santagata, F.; Wang, F.; Yu, H.; Sarro, P.M.; Zhang, G.Q. Pt-AlGaN/GaN HEMT-Sensor for Hydrogen Sulfide (H2S) Detection. Proceedings 2017, 1, 463.

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