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Proceedings 2017, 1(4), 446; doi:10.3390/proceedings1040446

Influence of Electrical Modes on Radiation Sensitivity of Hydrogen Sensors Based on Pd-Ta2O5-SiO2-Si Structures

1
Moscow Engineering Physics Institute, National Research Nuclear University MEPhI, Moscow, Russia
2
Induko Ltd., 32/2 Seslavinskaia str., Moscow, Russia
Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.
*
Author to whom correspondence should be addressed.
Published: 25 August 2017
(This article belongs to the Proceedings of Eurosensors 2017)
Download PDF [628 KB, uploaded 29 August 2017]

Abstract

The influence of the circuit’s electric modes on the radiation sensitivity of hydrogen sensors based on the metal-insulator-semiconductor field-effect transistor with structure Pd-Ta2O5-SiO2-Si (MISFET) was investigated. There were measured the hydrogen responses of output voltages V of the MISFET-based circuits at different gate voltages before and after the electron irradiations. The voltages V as functions of hydrogen concentration C were determined for different ionizing doses D. Models of influence of the electric modes on the radiation sensitivity of sensors were based on experimental dependencies of V(C, D). The recommendations for the optimal choice of MISFET-based circuit’s electric modes were formulated.
Keywords: hydrogen sensors; MISFET; radiation sensitivity; electric modes hydrogen sensors; MISFET; radiation sensitivity; electric modes
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Podlepetsky, B.; Kovalenko, A.; Nikiforova, M. Influence of Electrical Modes on Radiation Sensitivity of Hydrogen Sensors Based on Pd-Ta2O5-SiO2-Si Structures. Proceedings 2017, 1, 446.

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