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Proceedings 2017, 1(4), 358; doi:10.3390/proceedings1040358

Temperature Sensors Integrated into a CMOS Image Sensor

Electronic Instrumentation Laboratory, TU Delft, Delft, The Netherlands
Harvest Imaging, Bree, Belgium
Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.
Author to whom correspondence should be addressed.
Published: 7 September 2017
(This article belongs to the Proceedings of Eurosensors 2017)
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In this work, a novel approach is presented for measuring relative temperature variations inside the pixel array of a CMOS image sensor itself. This approach can give important information when compensation for dark (current) fixed pattern noise (FPN) is needed. The test image sensor consists of pixels and temperature sensors pixels (=Tixels). The size of the Tixels is 11 μm × 11 μm. Pixels and Tixels are placed next to each other in the active imaging array and use the same readout circuits. The design and the first measurements of the combined image-temperature sensor are presented.
Keywords: pixels; bipolar based temperature sensors; dark current pixels; bipolar based temperature sensors; dark current
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Abarca, A.; Xie, S.; Markenhof, J.; Theuwissen, A. Temperature Sensors Integrated into a CMOS Image Sensor. Proceedings 2017, 1, 358.

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