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Proceedings 2017, 1(4), 312; doi:10.3390/proceedings1040312

On the Development of Label-Free DNA Sensor Using Silicon Nanonet Field-Effect Transistors

1
University Grenoble Alpes, CNRS, Grenoble INP ‡, LMGP, F-38000 Grenoble, France
2
University Grenoble Alpes, CNRS, Grenoble INP ‡, IMEP-LaHC, F-38000 Grenoble, France
3
University Grenoble Alpes, CNRS, LTM, F-38000 Grenoble, France
Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.
*
Author to whom correspondence should be addressed.
Published: 28 August 2017
(This article belongs to the Proceedings of Eurosensors 2017)
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Abstract

In this paper, the process and electrical characteristics of DNA sensor devices based on silicon nanonet (SiNN) field-effect transistors are reported. The SiNN, another name of randomly oriented Si nanowires network, was successfully integrated into transistor as p-type channel using standard microelectronic technology. The SiNN-based transistors exhibit a high initial ON-state current (5.10−8 A) and homogeneous electrical characteristics. For DNA detection, a new and eco-friendly functionalization process based on glycidyloxypropyltrimethoxysilane (GOPS) was performed which enables the covalent grafting of DNA probes on SiNN. This hybridization leads to a significant decrease of ON-state current of device. Additionally, it is observed that SiNN devices reveal reproductive current response to DNA detection. We demonstrate, for the first time, the successful integration of SiNN into sensor for electrical label-free DNA detection at low cost.
Keywords: silicon nanowires; nanonets; field-effect transistors; electrical characteristics; DNA sensor; label-free detection; functionalization; GOPS; hybridization silicon nanowires; nanonets; field-effect transistors; electrical characteristics; DNA sensor; label-free detection; functionalization; GOPS; hybridization
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Nguyen, T.T.T.; Legallais, M.; Morisot, F.; Cazimajou, T.; Mouis, M.; Salem, B.; Stambouli, V.; Ternon, C. On the Development of Label-Free DNA Sensor Using Silicon Nanonet Field-Effect Transistors. Proceedings 2017, 1, 312.

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