Next Article in Journal
ZnO Nanostructure Based QCM Sensor to Detect Ethanol at Room Temperature Fabricated by All Wet Process
Previous Article in Journal
Exhaust Gas Analysis of Firewood Combustion Processes: Application of a Robust Thermoelectric Gas Sensor
Article Menu
Issue 4 (Eurosensors 2017) cover image

Article Versions

Export Article

Open AccessProceedings
Proceedings 2017, 1(4), 309; doi:10.3390/proceedings1040309

Nanofabrication of Vertically Aligned 3D GaN Nanowire Arrays with Sub-50 nm Feature Sizes Using Nanosphere Lift-off Lithography

1
Institute of Semiconductor Technology (IHT), TU Braunschweig, D-38106 Braunschweig, Germany
2
Laboratory for Emerging Nanometrology (LENA), TU Braunschweig, D-38106 Braunschweig, Germany
3
Department 5.1 Surface Metrology, Physikalisch-Technische Bundesanstalt (PTB), D-38116 Braunschweig, Germany
4
Research Center for Physics, Indonesian Institute of Sciences (LIPI), 15314 Tangerang Selatan, Indonesia
5
MIND-IN2UB, Department of Engineering-Electronics, University of Barcelona, E-08028 Barcelona, Spain
Presented at the Eurosensors 2017, Paris, France, 3–6 September 2017.
*
Author to whom correspondence should be addressed.
Published: 8 August 2017
Download PDF [583 KB, uploaded 27 August 2017]

Abstract

Vertically aligned 3D gallium nitride (GaN) nanowire arrays with sub-50 nm feature sizes were fabricated using a nanosphere lift-off lithography (NSLL) technique combined with hybrid top-down etching steps (i.e., inductively coupled plasma dry reactive ion etching (ICP-DRIE) and wet chemical etching). Owing to the well-controlled chemical surface treatment prior to the nanobead deposition and etching process, vertical GaN nanowire arrays with diameter of ~35 nm, pitch of ~350 nm, and aspect ratio of >10 could be realized using 500 nm polystyrene nanobead (PN) masks. This work has demonstrated a feasibility of using NSLL as an alternative for other sophisticated but expensive nanolithography methods to manufacture low-cost but highly ordered 3D GaN nanostructures.
Keywords: colloidal lithography; nanosphere lithography; nanostructure fabrication; gallium nitride (GaN); ICP-DRIE; wet chemical etching; selective area deposition; GaN surface treatment colloidal lithography; nanosphere lithography; nanostructure fabrication; gallium nitride (GaN); ICP-DRIE; wet chemical etching; selective area deposition; GaN surface treatment
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Granz, T.; Mariana, S.; Hamdana, G.; Yu, F.; Fatahilah, M.F.; Clavero, I.M.; Puranto, P.; Li, Z.; Brand, U.; Prades, J.D.; Peiner, E.; Waag, A.; Wasisto, H.S. Nanofabrication of Vertically Aligned 3D GaN Nanowire Arrays with Sub-50 nm Feature Sizes Using Nanosphere Lift-off Lithography. Proceedings 2017, 1, 309.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Proceedings EISSN 2504-3900 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top