Porous Silicon Carbide for MEMS†
AbstractMetal assisted photochemical etching (MAPCE) of 4H Silicon Carbide (SiC) was utilized to generate locally defined porous areas on single crystalline substrates. Therefore, Platinum (Pt) was sputter deposited on 4H-SiC substrates and patterned with photolithography and lift off. Etching was performed by immersing the Pt coated samples into an etching solution containing sodium persulphate and hydrofluoric acid. UV light irradiation was necessary for charge carrier generation while the Pt served as local cathode. The generated porous areas can be used for the generation of integrated cavities in the single crystalline SiC substrates when covered with a chemical vapor deposited thin film of poly-crystalline SiC.
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Leitgeb, M.; Zellner, C.; Pfusterschmied, G.; Schneider, M.; Schmid, U. Porous Silicon Carbide for MEMS. Proceedings 2017, 1, 297.
Leitgeb M, Zellner C, Pfusterschmied G, Schneider M, Schmid U. Porous Silicon Carbide for MEMS. Proceedings. 2017; 1(4):297.Chicago/Turabian Style
Leitgeb, Markus; Zellner, Christopher; Pfusterschmied, Georg; Schneider, Michael; Schmid, Ulrich. 2017. "Porous Silicon Carbide for MEMS." Proceedings 1, no. 4: 297.