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Proceedings 2017, 1(4), 297; doi:10.3390/proceedings1040297

Porous Silicon Carbide for MEMS

Institute of Sensor and Actuator Systems, TU Wien, Gusshausstrasse 27-29, 1040 Vienna, Austria
Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.
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Published: 30 August 2017
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Abstract

Metal assisted photochemical etching (MAPCE) of 4H Silicon Carbide (SiC) was utilized to generate locally defined porous areas on single crystalline substrates. Therefore, Platinum (Pt) was sputter deposited on 4H-SiC substrates and patterned with photolithography and lift off. Etching was performed by immersing the Pt coated samples into an etching solution containing sodium persulphate and hydrofluoric acid. UV light irradiation was necessary for charge carrier generation while the Pt served as local cathode. The generated porous areas can be used for the generation of integrated cavities in the single crystalline SiC substrates when covered with a chemical vapor deposited thin film of poly-crystalline SiC.
Keywords: metal assisted etching; Silicon Carbide; chemical vapor deposition metal assisted etching; Silicon Carbide; chemical vapor deposition
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Leitgeb, M.; Zellner, C.; Pfusterschmied, G.; Schneider, M.; Schmid, U. Porous Silicon Carbide for MEMS. Proceedings 2017, 1, 297.

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