Analytical Model of Double Barrier THz Rectifier†
AbstractThe application of the new structure to the complex field of THz receivers requires the availability of an analytical model, reliable and able to highlight the dependence on the parameters of the physical structure. We present a model of the rectification capability of the double barrier Terahertz radiation (THz) detector, a CMOS compatible structurer. The model is based on the hydrodynamic semiconductor equations; solved in the small signal approximation. The model highlights the high frequency dynamics of carriers in the structure; and furnishes new insight on the origin of the self-mixing rectification process.
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Palma, F.; Rao, R. Analytical Model of Double Barrier THz Rectifier. Proceedings 2017, 1, 279.
Palma F, Rao R. Analytical Model of Double Barrier THz Rectifier. Proceedings. 2017; 1(4):279.Chicago/Turabian Style
Palma, Fabrizio; Rao, Rosario. 2017. "Analytical Model of Double Barrier THz Rectifier." Proceedings 1, no. 4: 279.
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