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Proceedings 2017, 1(4), 279; doi:10.3390/proceedings1040279

Analytical Model of Double Barrier THz Rectifier

Rome University La Sapienza, Rome, Italy
Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.
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Published: 31 August 2017
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Abstract

The application of the new structure to the complex field of THz receivers requires the availability of an analytical model, reliable and able to highlight the dependence on the parameters of the physical structure. We present a model of the rectification capability of the double barrier Terahertz radiation (THz) detector, a CMOS compatible structurer. The model is based on the hydrodynamic semiconductor equations; solved in the small signal approximation. The model highlights the high frequency dynamics of carriers in the structure; and furnishes new insight on the origin of the self-mixing rectification process.
Keywords: Terahertz; rectification; self-mixing; hydrodynamic Terahertz; rectification; self-mixing; hydrodynamic
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Palma, F.; Rao, R. Analytical Model of Double Barrier THz Rectifier. Proceedings 2017, 1, 279.

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