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Condens. Matter 2017, 2(2), 19; doi:10.3390/condmat2020019

Analysis of the Efficient High-Temperature in Situ Photoluminescence from GaN Layers during Epitaxial Growth

1
Institute of Measurement Engineering and Sensor Technology, University of Applied Sciences Ruhr West, Mülheim an der Ruhr D-45407, Germany
2
General and Theoretical Electrical Engineering (ATE), Faculty of Engineering, University of Duisburg-Essen, Duisburg D-47048, Germany
3
CENIDE—Center for Nanointegration Duisburg-Essen, Duisburg D-47048, Germany
*
Author to whom correspondence should be addressed.
Academic Editor: Antonio Bianconi
Received: 27 March 2017 / Revised: 16 May 2017 / Accepted: 25 May 2017 / Published: 29 May 2017
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Abstract

Photoluminescence (PL) in GaN or InGaN layers monitored during epitaxial growth at high temperatures permits a quasi-continuous in situ characterization of opto-electronic properties. Therefore, epitaxial parameters can now be optimized at the earliest possible stage. A pulsed and high-power UV laser was required for PL excitation at high temperatures. Herein, the underlying nonlinear mechanism was studied via time-resolved PL experiments and rate equation-based modeling. A temperature-activated and saturable path for quenching over defects was identified. Beyond the saturation threshold, reasonably-intensive PL sets in. At high temperatures not only is the near band gap-PL present, but also—as a new observation—a defect-assisted PL emerges. Apart from these specific electronic transitions in high-temperature PL of GaN, a simple, but reasonably predictive model of the luminescent thin film has been set up to track down interference fringes in the PL spectra. It is worth mentioning that the spectral PL modulation (aiming at the Purcell effect) is often mixed up with ordinary Fabry–Pérot interference. A distinction has become key to properly analyze the spectral signatures of high-temperature PL in order to provide a reliable in situ characterization of GaN layers during epitaxial growth. View Full-Text
Keywords: characterization; metalorganic vapor phase epitaxy; nitrides; light emitting diodes characterization; metalorganic vapor phase epitaxy; nitrides; light emitting diodes
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Prall, C.; Erni, D.; Rueter, D. Analysis of the Efficient High-Temperature in Situ Photoluminescence from GaN Layers during Epitaxial Growth. Condens. Matter 2017, 2, 19.

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