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Condens. Matter 2017, 2(1), 3; doi:10.3390/condmat2010003

Influence of the Lattice Mismatch on the Atomic Ordering of ZnO Grown by Atomic Layer Deposition onto Single Crystal Surfaces with Variable Mismatch (InP, GaAs, GaN, SiC)

Laboratoire des Multimatériaux et Interfaces (LMI), UMR-CNRS 5615, Université de Lyon 1, F-69622 Villeurbanne, France
Current address: Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims, 51100 Reims, France
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Author to whom correspondence should be addressed.
Academic Editors: Augusto Marcelli and Antonio Bianconi
Received: 10 November 2016 / Revised: 12 December 2016 / Accepted: 19 December 2016 / Published: 8 January 2017
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Abstract

It has previously been reported that epitaxial growth of ZnO can be obtained at low temperatures by atomic layer deposition (ALD) onto a GaN (0001-Ga) surface, corresponding to a ~2.3% compressive lattice mismatch of the deposited ZnO. The question addressed here is the atomic ordering of deposited ZnO as a function of the lattice mismatch between ZnO and several single-crystal seeding surfaces. We have deposited ZnO using ALD onto either the (111) cubic or (0001) hexagonal surfaces of a set of available single-crystal substrates (GaAs, InP, GaN, SiC), for which the lattice mismatch varies over a wide range of values, positive and negative. It is found that deposition onto surfaces with very high extensive lattice mismatch (GaAs, InP) leads to polycrystalline ZnO, similar to the configuration obtained on an amorphous SiO2 surface. In contrast, ZnO ALD deposition onto both 2H-GaN (0001-Ga) and 4H-SiC (0001-Si) surfaces with lower and compressive mismatch leads to epitaxial ordering over the whole substrate temperature range of 180–250 °C. View Full-Text
Keywords: atomic layer deposition; ALD; ZnO; ZnO/GaN; ZnO/SiC; hetero-interface; heterojunction atomic layer deposition; ALD; ZnO; ZnO/GaN; ZnO/SiC; hetero-interface; heterojunction
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Faugier-Tovar, J.; Lazar, F.; Marichy, C.; Brylinski, C. Influence of the Lattice Mismatch on the Atomic Ordering of ZnO Grown by Atomic Layer Deposition onto Single Crystal Surfaces with Variable Mismatch (InP, GaAs, GaN, SiC). Condens. Matter 2017, 2, 3.

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