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Condens. Matter 2017, 2(1), 12; doi:10.3390/condmat2010012

Ultrafast Transport Transient in n-Doped ZnS in Wurtzite and Zincblende Phases

Escola de Ciências Exatas e da Computação, Pontifícia Universidade Católica de Goiás, 74605-010 Goiânia, Brazil
Academic Editor: Antonio Bianconi
Received: 26 January 2017 / Revised: 25 February 2017 / Accepted: 2 March 2017 / Published: 5 March 2017
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In this paper, we analyzed the ultrafast transient transport in n-doped ZnS in wurtzite and zincblende phases, driven far away from equilibrium by an electric field. Through the numerical solution of associate quantum transport equations based on the Non-Equilibrium Statistical Operator Method, the time evolution of the electron drift velocity and the non-equilibrium temperature of electrons and phonons were obtained, analyzing the dependence on the electric field strength. View Full-Text
Keywords: semiconductors; zinc sulfide; drift velocity; ultrafast transient semiconductors; zinc sulfide; drift velocity; ultrafast transient

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Rodrigues, C.G. Ultrafast Transport Transient in n-Doped ZnS in Wurtzite and Zincblende Phases. Condens. Matter 2017, 2, 12.

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