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Condens. Matter 2017, 2(1), 10; doi:10.3390/condmat2010010

Metastability Phenomena in VO2 Thin Films

1
INFN-LNF, Laboratori Nazionali di Frascati, Istituto Nazionale di Fisica Nucleare, Via Enrico Fermi 40, 00044 Frascati, Italy
2
RICMASS, Rome International Center for Materials Science, Superstripes, Via Sabelli 119A, 00185 Rome, Italy
3
CNR-ISM, Istituto di Struttura della Materia c/o, Elettra-Sincrotrone Trieste, 34149 Basovizza, Italy
4
CNR-IOM-OGG c/o ESRF, 71 Avenue des Martyrs, F-38043 Grenoble, France
5
National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026 Hefei, China
6
High Field Magnet Laboratory, Radboud University Nijmegen, Toerooiveld 7, 6525 ED Nijmegen, The Netherlands
7
CNR-IC, Istituto di Cristallografia, Via Giovanni Amendola, 00015 Roma, Italy
*
Author to whom correspondence should be addressed.
Academic Editor: Andrzej M. Oleś
Received: 1 December 2016 / Revised: 10 February 2017 / Accepted: 15 February 2017 / Published: 18 February 2017
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Abstract

VO2 is a transition metal oxide in which complex electronic phases appear near the metal-to-insulator transition due to electron correlation and electron–lattice interactions. This system is characterized by a metal-to-insulator transition (MIT) at around 341 K. The metal (high T) phase is tetragonal while the insulator (low T) phase is monoclinic and the resistivity changes at the MIT by about five orders of magnitude. Here, we report investigations of the MIT in a thin VO2 film deposited on a sapphire substrate showing hysteresis. The MIT has been characterized by resistance measurements versus temperature and a DC magnetic field. The thin sample shows different final resistance values in both the insulating and metallic state after different temperature cycles. Moreover, some cycles do not close in the insulating phase. An unexpected magnetic dependence of the temperature cycle in the sample was also observed. The results show that the MIT of VO2 can be controlled by reducing the thickness below 40 nm in micron-sized ribbons since MIT is associated with the emergence of coexisting metastable conformations controlled by the thickness-dependent misfit strain and stress distributions induced by the mismatch between thin ribbon film and the substrate. View Full-Text
Keywords: VO2 oxide; strain in thin layer and interface; metal–semiconductor interfaces VO2 oxide; strain in thin layer and interface; metal–semiconductor interfaces
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MDPI and ACS Style

Gioacchino, D.D.; Marcelli, A.; Puri, A.; Zou, C.; Fan, L.; Zeitler, U.; Bianconi, A. Metastability Phenomena in VO2 Thin Films. Condens. Matter 2017, 2, 10.

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