Early Stage of Sb Ultra-Thin Film Growth: Crystal Structure and Electron Band Structure
AbstractThe evolution of the electron band structure upon the reduction of Sb film on a Si(111)-(6 × 6)Au substrate, relevant to topological insulator properties, is experimentally systematically investigated by the reflection high-energy electron diffraction (RHEED), in situ surface electron transport and angular resolved photoemission spectroscopy methods. The experiments reveal that a bilayer (BL) of Sb is crystalline but the subsequent three BLs on top of it form amorphous layers. The five-BL-thick film transforms back to the crystalline form. The bilayer as well as 1.2- and 3.8-BL-thick films show the electron band structure with a relatively large energy gap at the Γ point of the Brillouin zone. The theoretically predicted band structure is observed at 4.8 BL coverage. View Full-Text
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Stróżak, M.; Kopciuszyński, M.; Stępniak-Dybala, A.; Krawiec, M.; Jałochowski, M. Early Stage of Sb Ultra-Thin Film Growth: Crystal Structure and Electron Band Structure. Condens. Matter 2016, 1, 11.
Stróżak M, Kopciuszyński M, Stępniak-Dybala A, Krawiec M, Jałochowski M. Early Stage of Sb Ultra-Thin Film Growth: Crystal Structure and Electron Band Structure. Condensed Matter. 2016; 1(1):11.Chicago/Turabian Style
Stróżak, Mirosław; Kopciuszyński, Marek; Stępniak-Dybala, Agnieszka; Krawiec, Mariusz; Jałochowski, Mieczysław. 2016. "Early Stage of Sb Ultra-Thin Film Growth: Crystal Structure and Electron Band Structure." Condens. Matter 1, no. 1: 11.
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