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Condens. Matter 2016, 1(1), 11; doi:10.3390/condmat1010011

Early Stage of Sb Ultra-Thin Film Growth: Crystal Structure and Electron Band Structure

Institute of Physics, Maria Curie-Skłodowska University, Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland
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Academic Editors: Augusto Marcelli and Antonio Bianconi
Received: 10 November 2016 / Revised: 8 December 2016 / Accepted: 14 December 2016 / Published: 16 December 2016
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Abstract

The evolution of the electron band structure upon the reduction of Sb film on a Si(111)-(6 × 6)Au substrate, relevant to topological insulator properties, is experimentally systematically investigated by the reflection high-energy electron diffraction (RHEED), in situ surface electron transport and angular resolved photoemission spectroscopy methods. The experiments reveal that a bilayer (BL) of Sb is crystalline but the subsequent three BLs on top of it form amorphous layers. The five-BL-thick film transforms back to the crystalline form. The bilayer as well as 1.2- and 3.8-BL-thick films show the electron band structure with a relatively large energy gap at the Γ point of the Brillouin zone. The theoretically predicted band structure is observed at 4.8 BL coverage. View Full-Text
Keywords: topological insulator; antimony; ultrathin films; RHEED; angle-resolved photoemission spectroscopy (ARPES); surface conductivity topological insulator; antimony; ultrathin films; RHEED; angle-resolved photoemission spectroscopy (ARPES); surface conductivity
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MDPI and ACS Style

Stróżak, M.; Kopciuszyński, M.; Stępniak-Dybala, A.; Krawiec, M.; Jałochowski, M. Early Stage of Sb Ultra-Thin Film Growth: Crystal Structure and Electron Band Structure. Condens. Matter 2016, 1, 11.

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