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Batteries 2015, 1(1), 11-21; doi:10.3390/batteries1010011

Charge-Storage Process of Stoichiometric and Nanostructured Ruthenium Nitride Thin Films

1
Department of Life Sciences and Biotechnologies, University of Ferrara, via L. Borsari 46, Ferrara 44121, Italy
2
Department of Molecular Sciences and Nanosystems, Ca’ Foscari University of Venice, Via Torino 155/B, Mestre-VE 30172, Italy
Present address: SIA Batteries, via del Chiavicone 1, Altedo (BO) 40051, Italy.
*
Author to whom correspondence should be addressed.
Academic Editor: Joeri Van Mierlo
Received: 31 July 2015 / Revised: 21 October 2015 / Accepted: 27 October 2015 / Published: 29 October 2015
(This article belongs to the Special Issue Rechargeable Battery Technologies--From Materials to Applications)
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Abstract

Ti-supported RuN thin films, synthesized by rf-magnetron sputtering, have been electrochemically characterized, focusing in particular to their charge-storage capacity, and to the mechanisms that influence this important property, in view, e.g., of applications in supercapacitors. Based on cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) data, a deconvolution of non-faradic and faradic contributions has been attempted, and a mechanism for the charging/discharging process has been proposed. View Full-Text
Keywords: ruthenium nitride; sputter deposition; supercapacitors; nanostructured thin films; voltammetric hysteresis ruthenium nitride; sputter deposition; supercapacitors; nanostructured thin films; voltammetric hysteresis
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Rosestolato, D.; Battaglin, G.; Ferro, S. Charge-Storage Process of Stoichiometric and Nanostructured Ruthenium Nitride Thin Films. Batteries 2015, 1, 11-21.

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