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Machines 2018, 6(2), 15; https://doi.org/10.3390/machines6020015

Theoretical and Experimental Studies of Over-Polishing of Silicon Carbide in Annular Polishing

1
Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001, China
2
Xiaguang Optical Electron Co., Ltd, Yangzhou 225127, China
3
School of Mechanical and Electrical Engineering and Automation, National University of Defense Technology, Changsha 410073, China
*
Author to whom correspondence should be addressed.
Received: 7 February 2018 / Revised: 28 March 2018 / Accepted: 3 April 2018 / Published: 4 April 2018
(This article belongs to the Special Issue Precision Machining)
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Abstract

Annular polishing technology is an important optical machining method for achieving a high-precision mirror surface on silicon carbide. However, the inevitable over-polishing of the specimen edge in annular polishing deteriorates achieved surface quality. In the present work, we first analytically investigate the kinematic coupling of multiple relative motions in the annular polishing process and subsequently derive an analytical model that addresses the principle of material removal at specimen edge based on the Preston equation and the rigid body contact model. We then perform finite element simulations and experiments involving annular polishing of silicon carbide (SiC), which jointly exhibit agreement with the derived analytical model of material removal. View Full-Text
Keywords: silicon carbide; annular polishing; material removal; over-polishing; finite element silicon carbide; annular polishing; material removal; over-polishing; finite element
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
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Zhang, J.; Han, L.; Liu, H.; Shi, Y.; Yan, Y.; Sun, T. Theoretical and Experimental Studies of Over-Polishing of Silicon Carbide in Annular Polishing. Machines 2018, 6, 15.

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