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Crystals 2018, 8(9), 366; https://doi.org/10.3390/cryst8090366

Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

National Institute of Standards and Technology (NIST), Boulder, CO 80305, USA
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Received: 23 July 2018 / Revised: 27 August 2018 / Accepted: 13 September 2018 / Published: 16 September 2018
(This article belongs to the Special Issue Growth and Structural Characterization of Self-Nucleated Nanowires)
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Abstract

Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and buffer. Defects related to Al–Si eutectic formation were observed in all samples, irrespective of lattice mismatch and buffer layer polarity. Eutectic related defects in the Si surface caused voids in N-polar samples, but not in metal-polar samples. Likewise, inversion domains were present in N-polar, but not metal-polar samples. The morphology of Ga-polar GaN SAG on nitride buffered Si(111) was similar to that of homoepitaxial GaN SAG. View Full-Text
Keywords: gallium nitride; selective area growth; polarity; defects; PAMBE; TEM gallium nitride; selective area growth; polarity; defects; PAMBE; TEM
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Roshko, A.; Brubaker, M.; Blanchard, P.; Harvey, T.; Bertness, K.A. Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates. Crystals 2018, 8, 366.

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