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Crystals 2018, 8(6), 257; https://doi.org/10.3390/cryst8060257

Dislocation-Free SiGe/Si Heterostructures

1
L-NESS and Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, Via R. Cozzi 55, I-20125 Milano, Italy
2
Institute of Scientific Computing, Technische Universitat Dresden, 01062 Dresden, Germany
3
L-NESS and Dipartimento di Fisica, Politecnico di Milano, Via Anzani 42, I-22100 Como, Italy
4
Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg 1, CH-8093 Zürich, Switzerland
5
Electron Microscopy Center Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
Present address: CSIRO Manufacturing, 36 Bradfield Road, Lindfield, NSW 2070, Australia.
*
Author to whom correspondence should be addressed.
Received: 5 June 2018 / Revised: 14 June 2018 / Accepted: 16 June 2018 / Published: 19 June 2018
(This article belongs to the Special Issue Crystal Dislocations: Their Impact on Physical Properties of Crystals)
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Abstract

Ge vertical heterostructures grown on deeply-patterned Si(001) were first obtained in 2012 (C.V. Falub et al., Science2012, 335, 1330–1334), immediately capturing attention due to the appealing possibility of growing micron-sized Ge crystals largely free of thermal stress and hosting dislocations only in a small fraction of their volume. Since then, considerable progress has been made in terms of extending the technique to several other systems, and of developing further strategies to lower the dislocation density. In this review, we shall mainly focus on the latter aspect, discussing in detail 100% dislocation-free, micron-sized vertical heterostructures obtained by exploiting compositional grading in the epitaxial crystals. Furthermore, we shall also analyze the role played by the shape of the pre-patterned substrate in directly influencing the dislocation distribution. View Full-Text
Keywords: heteroepitaxy; defects; semiconductors; elasticity; plasma-enhanced chemical vapour deposition heteroepitaxy; defects; semiconductors; elasticity; plasma-enhanced chemical vapour deposition
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
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Montalenti, F.; Rovaris, F.; Bergamaschini, R.; Miglio, L.; Salvalaglio, M.; Isella, G.; Isa, F.; von Känel, H. Dislocation-Free SiGe/Si Heterostructures. Crystals 2018, 8, 257.

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