Modeling and Analysis of Novel Horizontal Ribbon Growth of Silicon Crystal
AbstractWe present a novel horizontal ribbon growth (HRG) process and a theoretical analysis of this method. Assuming that the existence of the meniscus is defined by diffuse growth, we determine analytically the thickness and height of the meniscus and an explicit expression for the performance of meniscus under different conditions. We then calculate the thermal profile in melt part, as well as the conditions under which the undercooling is sufficient around the solidification point. We find that diffuse growth is more sensitive to small initial thickness, and find the minimum length of the melt part to obtain undercooling. Finally, we calculate the change rule of solidification position by a variational approach, as well as the stability of the process under different conditions. We also give an expression to the instability of past HRG methods. View Full-Text
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Xu, J.; Shen, D.; Sun, T.; Ding, J.; Yuan, N. Modeling and Analysis of Novel Horizontal Ribbon Growth of Silicon Crystal. Crystals 2018, 8, 36.
Xu J, Shen D, Sun T, Ding J, Yuan N. Modeling and Analysis of Novel Horizontal Ribbon Growth of Silicon Crystal. Crystals. 2018; 8(1):36.Chicago/Turabian Style
Xu, Jiawei; Shen, Dapeng; Sun, Tao; Ding, Jianning; Yuan, Ningyi. 2018. "Modeling and Analysis of Novel Horizontal Ribbon Growth of Silicon Crystal." Crystals 8, no. 1: 36.