On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate
AbstractIn this study, low-temperature (LT) and high-temperature (HT) AlN insertion layers (ILs) grown at 680 and 970 °C were integrated with 3.7-μm GaN-based heterostructure grown on 150-mm Si (111) substrates by metalorganic chemical vapor deposition. Under a V/III flow ratio of 1960, the GaN epilayer with a continuous interface resulting from the LT AlN IL was subject to a compressive stress of −0.109 GPa. However, the GaN epilayer with discontinuous interfaces resulting from the HT AlN IL growth under the same flow ratio was subject to a tensile stress of 0.174 GPa. To realize continuous interfaces between the GaN epilayer and HT AlN IL, a higher V/III ratio of 5960 was utilized to suppress the decomposition of GaN. It results in changing the stress state of the GaN-based heterostructure from tensile to compressive. This strategic finding indicates that a stress-controllable GaN on Si can be achieved via the incorporation of HT AlN ILs. A minimum curvature at 5 km−1 is demonstrated for the 3.7-μm GaN-based heterostructure on a 150-mm Si (111) substrate, which has high potential for power switching device applications. View Full-Text
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Lin, P.-J.; Tien, C.-H.; Wang, T.-Y.; Chen, C.-L.; Ou, S.-L.; Chung, B.-C.; Wuu, D.-S. On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate. Crystals 2017, 7, 134.
Lin P-J, Tien C-H, Wang T-Y, Chen C-L, Ou S-L, Chung B-C, Wuu D-S. On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate. Crystals. 2017; 7(5):134.Chicago/Turabian Style
Lin, Po-Jung; Tien, Ching-Ho; Wang, Tzu-Yu; Chen, Che-Lin; Ou, Sin-Liang; Chung, Bu-Chin; Wuu, Dong-Sing. 2017. "On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate." Crystals 7, no. 5: 134.
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