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Crystals 2016, 6(11), 144; doi:10.3390/cryst6110144

Interplay Effect of Excitation and Temperature on Carrier Transfer between Vertically Aligned InAs/GaAs Quantum Dot Pairs

1
College of Physics Science & Technology, Hebei University, Baoding 071002, China
2
Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA
3
Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA
*
Author to whom correspondence should be addressed.
Academic Editor: Paul J. Simmonds
Received: 1 September 2016 / Revised: 7 November 2016 / Accepted: 8 November 2016 / Published: 10 November 2016
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Abstract

Carrier transfer in vertically-coupled InAs/GaAs quantum dot (QD) pairs is investigated. Photoluminescence (PL) and PL excitation spectra measured at low temperature indicate that the PL peak intensity ratio between the emission from the two sets of QDs—i.e., the relative population of carriers between the two layers of QDs—changes with increasing excitation intensity. Temperature-dependent PL reveals unexpected non-monotonic variations in the peak wavelength and linewidth of the seed layer of QDs with temperature. The PL intensity ratio exhibits a “W” behavior with respect to the temperature due to the interplay between temperature and excitation intensity on the inter-layer carrier transfer. View Full-Text
Keywords: photoluminescence; self-assembled quantum dots; carrier transfer; semiconductor photoluminescence; self-assembled quantum dots; carrier transfer; semiconductor
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Liu, Y.; Wang, Y.; Liang, B.; Guo, Q.; Wang, S.; Fu, G.; Mazur, Y.I.; Ware, M.E.; Salamo, G.J. Interplay Effect of Excitation and Temperature on Carrier Transfer between Vertically Aligned InAs/GaAs Quantum Dot Pairs. Crystals 2016, 6, 144.

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