Study of Charge Carrier Transport in GaN Sensors
AbstractCapacitor and Schottky diode sensors were fabricated on GaN material grown by hydride vapor phase epitaxy and metal-organic chemical vapor deposition techniques using plasma etching and metal deposition. The operational characteristics of these devices have been investigated by profiling current transients and by comparing the experimental regimes of the perpendicular and parallel injection of excess carrier domains. Profiling of the carrier injection location allows for the separation of the bipolar and the monopolar charge drift components. Carrier mobility values attributed to the hydride vapor phase epitaxy (HVPE) GaN material have been estimated as μe = 1000 ± 200 cm2/Vs for electrons, and μh = 400 ± 80 cm2/Vs for holes, respectively. Current transients under injection of the localized and bulk packets of excess carriers have been examined in order to determine the surface charge formation and polarization effects. View Full-Text
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Gaubas, E.; Ceponis, T.; Kuokstis, E.; Meskauskaite, D.; Pavlov, J.; Reklaitis, I. Study of Charge Carrier Transport in GaN Sensors. Materials 2016, 9, 293.
Gaubas E, Ceponis T, Kuokstis E, Meskauskaite D, Pavlov J, Reklaitis I. Study of Charge Carrier Transport in GaN Sensors. Materials. 2016; 9(4):293.Chicago/Turabian Style
Gaubas, Eugenijus; Ceponis, Tomas; Kuokstis, Edmundas; Meskauskaite, Dovile; Pavlov, Jevgenij; Reklaitis, Ignas. 2016. "Study of Charge Carrier Transport in GaN Sensors." Materials 9, no. 4: 293.
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