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Materials 2016, 9(3), 164; doi:10.3390/ma9030164

Electronic Structure and Optical Property Analysis of Al/Ga-Codoped ZnO through First-Principles Calculations

Department of Materials Engineering, Ming Chi University of Technology, New Taipei 24301, Taiwan
Author to whom correspondence should be addressed.
Academic Editors: Takuya Tsuzuki and Christof Schneider
Received: 9 October 2015 / Revised: 28 January 2016 / Accepted: 1 March 2016 / Published: 4 March 2016
(This article belongs to the Special Issue Transparent Conducting Oxide Nanoparticles)
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Using density functional theory and the Hubbard U method, we investigated the geometric structure, electronic structure, and optical property of Al/Ga-codoped ZnO. A 3 × 3 × 3 ZnO supercell was used to construct Al- and Ga-monodoped ZnO structures and Al/Ga-codoped ZnO (AGZO) structures. All three structures showed n-type conduction, and the optical band gaps were larger than that of pure ZnO. For a given impurity concentration, Ga impurities contribute more free carriers than Al impurities in AGZO. However, the presence of Al impurities improves the transmittance. These results can theoretically explain the factors that influence the electrical and optical properties. View Full-Text
Keywords: first-principles calculations; AGZO; electronic structure; optical properties first-principles calculations; AGZO; electronic structure; optical properties

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Chen, C.-C.; Wu, H.-C. Electronic Structure and Optical Property Analysis of Al/Ga-Codoped ZnO through First-Principles Calculations. Materials 2016, 9, 164.

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