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Materials 2016, 9(12), 987; doi:10.3390/ma9120987

Optoelectronic Properties and the Electrical Stability of Ga-Doped ZnO Thin Films Prepared via Radio Frequency Sputtering

1
Institute of Physics, Academia Sinica, Taipei 115, Taiwan
2
Institute of Optoelectronic Science, National Taiwan Ocean University, Keelung 202, Taiwan
3
Institute of Materials Science and Engineering, Ocean University of China, 238 Songling Road, Qingdao 266100, China
4
Department of Materials Engineering and Center for Thin Film Technologies and Applications, Ming Chi University of Technology, Taipei 243, Taiwan
5
Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan
*
Author to whom correspondence should be addressed.
Academic Editor: Andrea Li Bassi
Received: 26 October 2016 / Revised: 22 November 2016 / Accepted: 29 November 2016 / Published: 6 December 2016
(This article belongs to the Special Issue Advances in Transparent Conducting Materials)
View Full-Text   |   Download PDF [2910 KB, uploaded 6 December 2016]   |  

Abstract

In this work, Ga-doped ZnO (GZO) thin films were deposited via radio frequency sputtering at room temperature. The influence of the Ga content on the film’s optoelectronic properties as well as the film’s electrical stability were investigated. The results showed that the film’s crystallinity degraded with increasing Ga content. The film’s conductivity was first enhanced due to the replacement of Zn2+ by Ga3+ before decreasing due to the separation of neutralized gallium atoms from the ZnO lattice. When the Ga content increased to 15.52 at %, the film’s conductivity improved again. Furthermore, all films presented an average transmittance exceeding 80% in the visible region. Regarding the film’s electrical stability, GZO thermally treated below 200 °C exhibited no significant deterioration in electrical properties, but such treatment over 200 °C greatly reduced the film’s conductivity. In normal atmospheric conditions, the conductivity of GZO films remained very stable at ambient temperature for more than 240 days. View Full-Text
Keywords: Ga-doped ZnO (GZO) thin films; optoelectronic properties; rf sputtering; electrical stability Ga-doped ZnO (GZO) thin films; optoelectronic properties; rf sputtering; electrical stability
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Jen, S.-U.; Sun, H.; Chiang, H.-P.; Chen, S.-C.; Chen, J.-Y.; Wang, X. Optoelectronic Properties and the Electrical Stability of Ga-Doped ZnO Thin Films Prepared via Radio Frequency Sputtering. Materials 2016, 9, 987.

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