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Materials 2015, 8(8), 4829-4842; doi:10.3390/ma8084829

Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing

1
Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, UK
2
Nano and Advanced Materials Institute, Hong Kong University of Science and Technology, Kowloon 999077, Hong Kong, China
3
Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China
4
Department of Materials Science and Engineering, University of Liverpool, Liverpool L69 3GH, UK
*
Author to whom correspondence should be addressed.
Academic Editor: Martin Frank
Received: 7 May 2015 / Revised: 16 July 2015 / Accepted: 21 July 2015 / Published: 29 July 2015
(This article belongs to the Section Manufacturing Processes and Systems)
View Full-Text   |   Download PDF [810 KB, uploaded 29 July 2015]   |  

Abstract

A powerful characterization technique, pulse capacitance-voltage (CV) technique, was used to investigate oxide traps before and after annealing for lanthanide zirconium oxide thin films deposited on n-type Si (111) substrates at 300 °C by liquid injection Atomic Layer Deposition (ALD). The results indicated that: (1) more traps were observed compared to the conventional capacitance-voltage characterization method in LaZrOx; (2) the time-dependent trapping/de-trapping was influenced by the edge time, width and peak-to-peak voltage of a gate voltage pulse. Post deposition annealing was performed at 700 °C, 800 °C and 900 °C in N2 ambient for 15 s to the samples with 200 ALD cycles. The effect of the high temperature annealing on oxide traps and leakage current were subsequently explored. It showed that more traps were generated after annealing with the trap density increasing from 1.41 × 1012 cm−2 for as-deposited sample to 4.55 × 1012 cm−2 for the 800 °C annealed one. In addition, the leakage current density increase from about 106 A/cm2 at Vg = +0.5 V for the as-deposited sample to 10−3 A/cm2 at Vg = +0.5 V for the 900 °C annealed one. View Full-Text
Keywords: pulse capacitance-voltage; lanthanide zirconium oxide; oxide traps; high temperature annealing pulse capacitance-voltage; lanthanide zirconium oxide; oxide traps; high temperature annealing
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Lu, Q.; Zhao, C.; Mu, Y.; Zhao, C.Z.; Taylor, S.; Chalker, P.R. Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing. Materials 2015, 8, 4829-4842.

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