Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate
Abstract
:1. Introduction
2. Results and Discussion
2.1. Growth Process
2.2. Material Characterization
3. Experimental Section
4. Conclusions
Acknowledgments
Author Contributions
Conflicts of Interest
References
- Luque, A.; Stanley, C. Understanding intermediate-band solar cells. Nat. Photonics 2012, 6, 146–152. [Google Scholar] [CrossRef] [Green Version]
- Luque, A.; Marti, A. Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels. Phys. Rev. Lett. 1997, 78, 5014–5017. [Google Scholar] [CrossRef]
- Marti, A.; Antolin, E.; Stanley, R.C.; Farmer, C.D.; Lopez, N.; Diaz, P.; Canovas, E.; Linares, G.P.; Luque, A. Production of photocurrent due to intermediate-to-conduction-band transitions: A demonstration of a key operating principle of the intermediate-band solar cell. Phys. Rev. Lett. 2006, 97. [Google Scholar] [CrossRef]
- Marrón, D.F.; Artacho, I.; Stanley, R.C.; Steer, M.; Kaizu, T.; Shoji, Y.; Ahsan, N.; Okada, Y.; Barrigón, E.; Rey-Stolle, I.; et al. Application of photoreflectance to advanced multilayer structures for photovoltaics. Mater. Sci. Eng. B 2013, 178, 599–608. [Google Scholar] [CrossRef]
- Wu, J.; Makableh, Y.M.F.; Vasan, R.; Manasreh, M.O.; Liang, B.; Reyner, C.J.; Huffaker, D.L. Strong interband transitions in InAs quantum dots solar cell. Appl. Phys. Lett. 2012, 100. [Google Scholar] [CrossRef]
- Bailey, C.G.; Forbes, D.V.; Raffaelle, R.P.; Hubbard, S.M. Near 1 V open circuit voltage InAs/GaAs quantum dot solar cells. Appl. Phys. Lett. 2011, 98. [Google Scholar] [CrossRef]
- Guimard, D.; Morihara, R.; Bordel, D.; Tanabe, K.; Wakayama, Y.; Nishioka, M.; Arakawa, Y. Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage. Appl. Phys. Lett. 2010, 96. [Google Scholar] [CrossRef]
- Linares, P.G.; Marti, A.; Antoli, E.; Farmer, C.D.; Ramiro, I.; Stanley, C.R.; Luque, A. Voltage recovery in intermediate band solar cells. Sol Energy Mater. Sol. Cells 2012, 98, 240–244. [Google Scholar] [CrossRef]
- Soga, T.; Jimbo, T.; Arokiaraj, J.; Umeno, M. Growth of stress-released GaAs on GaAs/Si structure by metalorganic chemical vapor deposition. Appl. Phys. Lett. 2000, 77. [Google Scholar] [CrossRef]
- Azeza, B.; Ezzedini, M.; Zaaboub, Z.; M’ghaieth, R.; Sfaxi, L.; Hassen, F.; Maaref, H. Impact of rough silicon buffer layer on electronic quality of GaAs grown on Si substrate. Curr. Appl. Phys. 2012, 12, 1256–1258. [Google Scholar] [CrossRef]
- Vanamu, G.; Datye, A.K.; Dawson, R.; Zaidi, S.H. Growth of high-quality GaAs on Ge∕Si1−xGex on nanostructured silicon substrates. Appl. Phys. Lett. 2006, 88. [Google Scholar] [CrossRef]
- Carlin, J.A.; Ringel, S.A.; Fitzgerald, A.; Bulsara, M. High-lifetime GaAs on Si using GeSi buffers and its potential for space photovoltaics. Sol. Energy Mater. Sol. Cells 2001, 66, 621–630. [Google Scholar] [CrossRef]
- Wang, G.; Ogawa, T.; Soga, T.; Jimbo, T.; Umeno, M. A detailed study of H2 plasma passivation effects on GaAs/Si solar cell Sol. Energy Mater. Sol. Cells 2001, 66, 599–605. [Google Scholar] [CrossRef]
- Shimizu, Y.; Okada, Y. Growth of high-quality GaAs/Si films for use in solar cell applications. J. Cryst. Growth 2004, 265, 99–106. [Google Scholar] [CrossRef]
- Wang, T.; Liu, H.; Lee, A.; Pozzi, F.; Seeds, A. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates. Opt. Express 2011, 19, 11381–11386. [Google Scholar] [CrossRef] [PubMed]
- Liu, H.; Wang, T.; Jiang, Q.; Hogg, R.; Tutu, F.; Pozzi, F.; Seeds, A. Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate. Nat. Photonics 2011, 5, 416–419. [Google Scholar] [CrossRef]
- Lee, C.H.; Wang, J.; Kayatsha, V.K.; Huang, J.Y.; Yap, Y.K. Effective growth of boron nitride nanotubes by thermal chemical vapor deposition. Nanotechnology 2008, 19. [Google Scholar] [CrossRef] [PubMed]
- Bordel, D.; Guimard, D.; Rajesh, M.; Nishioka, M.; Augendre, E.; Clavelier, L.; Arakawa, Y. Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon (GeOI) substrate with high optical quality at room temperature in the 1.3 μm band. Appl. Phys. Lett. 2010, 96. [Google Scholar] [CrossRef]
- Liang, Y.Y.; Yoon, S.F.; Ngo, C.Y.; Loke, W.K.; Fitzgerald, E.A. Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission. J. Phys. D Appl. Phys. 2012, 45. [Google Scholar] [CrossRef]
- Sandall, I.; Ng, J.S.; David, J.P.; Tan, C.H.; Wang, T.; Liu, H. 1300 nm wavelength InAs quantum dot photodetector grown on silicon. Opt. Express. 2012, 20, 10446–10452. [Google Scholar] [CrossRef] [PubMed]
- Tanabe, K.; Watanabe, K.; Arakawa, Y. Flexible thin-film InAs/GaAs quantum dot solar cells. Appl. Phys. Lett. 2012, 100. [Google Scholar] [CrossRef]
- Laghumavarapu, R.B.; El-Emawy, M.; Nuntawong, N.; Moscho, A.; Lester, L.F.; Huffakerb, D.L. Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation layers. Appl. Phys. Lett. 2007, 91. [Google Scholar] [CrossRef]
- Hubbard, S.M.; Cress, C.D.; Bailey, C.G.; Bailey, S.G.; Wilt, D.M.; Raffaelle, R.P. Effect of strain compensation on quantum dot enhanced GaAs solar cells. Appl. Phys. Lett. 2008, 92. [Google Scholar] [CrossRef]
- Popescu, V.; Bester, G.; Hanna, M.C.; Norman, A.G.; Zunger, A. Theoretical and experimental examination of the intermediate-band concept for strain-balanced (In,Ga)As/Ga(As,P) quantum dot solar cells. Phys. Rev. B 2008, 78. [Google Scholar] [CrossRef]
- Ilahi, B.; Sfaxi, L.; Maaref, H. Optical investigation of InGaAs-capped InAs quantum dots: Impact of the strain-driven phase separation and dependence upon post-growth thermal treatment. J. Lumin. 2007, 127, 741–746. [Google Scholar] [CrossRef]
- Nasr, O.; HadjAlouane, M.H.; Maaref, H.; Hassen, F.; Sfaxi, L.; Ilahi, B. Comprehensive investigation of optical and electronic properties of tunable InAs QDs optically active at O-band telecommunication window with (In)GaAs surrounding material. J. Lumin. 2014, 148, 243–248. [Google Scholar] [CrossRef]
- Azeza, B.; Sfaxi, L.; M’ghaieth, R.; Fouzri, A.; Maaref, H. Growth of n-GaAs layer on a rough surface of p-Si substrate by molecular beam epitaxy (MBE) for photovoltaic applications. J. Cryst. Growth. 2011, 317, 104–109. [Google Scholar] [CrossRef]
- Bollet, F.; Gillin, W.; Hopkinson, M.; Gwilliam, R. Concentration dependent interdiffusion in InGaAs∕GaAs as evidenced by high resolution X-ray diffraction and photoluminescence spectroscopy. J. Appl. Phys. 2005, 97. [Google Scholar] [CrossRef] [Green Version]
- Wang, L.; Li, M.; Wang, W.; Tian, H.; Xing, Z.; Xiong, M.; Zhao, L. Srain accumulation in InAs/InGaAs quntum dots. Appl. Phys. A 2011, 104, 257–261. [Google Scholar] [CrossRef]
- Willis, S.M.; Dimmock, J.R.A.; Tutu, F.; Liu, H.Y.; Peinado, M.G.; Assender, H.E.; Watt, A.A.R.; Sellers, R.I. Defect mediated extraction in InAs/GaAs quantum dot solar cells. Sol. Energy Mater. Sol. Cells 2012, 102, 142–147. [Google Scholar] [CrossRef]
- Nozawa, T.; Arakawa, Y. Detailed balance limit of the efficiency of multilevel intermediate band solar cells. Appl. Phys. Lett. 2011, 98. [Google Scholar] [CrossRef]
© 2015 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/4.0/).
Share and Cite
Azeza, B.; Hadj Alouane, M.H.; Ilahi, B.; Patriarche, G.; Sfaxi, L.; Fouzri, A.; Maaref, H.; M’ghaieth, R. Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate. Materials 2015, 8, 4544-4552. https://doi.org/10.3390/ma8074544
Azeza B, Hadj Alouane MH, Ilahi B, Patriarche G, Sfaxi L, Fouzri A, Maaref H, M’ghaieth R. Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate. Materials. 2015; 8(7):4544-4552. https://doi.org/10.3390/ma8074544
Chicago/Turabian StyleAzeza, Bilel, Mohamed Helmi Hadj Alouane, Bouraoui Ilahi, Gilles Patriarche, Larbi Sfaxi, Afif Fouzri, Hassen Maaref, and Ridha M’ghaieth. 2015. "Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate" Materials 8, no. 7: 4544-4552. https://doi.org/10.3390/ma8074544