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Materials 2015, 8(7), 4544-4552; doi:10.3390/ma8074544

Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate

1
Laboratoire Micro-Optoélectroniques et Nanostructures, Faculté des Sciences de Monastir, Université de Monastir, Monatir 5019, Tunisia
2
Turaif Sciences College, Northern Borders University, P.O. 833, Turaif 91411, Kingdom of Saudi Arabia
3
Laboratoire de Photonique et de Nanostructures (LPN), UPR20-CNRS, Route de Nozay, Marcoussis 91460, France
4
King Saud University, Department of Physics and Astronomy, College of Sciences, P.O. 2455, Riyadh 11451, Kingdom of Saudi Arabia
5
Laboratoire de Physico-Chimie des Matériaux, Faculté des Sciences de Monastir, Université de Monastir, Monastir 5019, Tunisia
*
Author to whom correspondence should be addressed.
Academic Editor: Joshua Pearce
Received: 18 June 2015 / Revised: 12 July 2015 / Accepted: 14 July 2015 / Published: 22 July 2015
(This article belongs to the Special Issue Photovoltaic Materials and Electronic Devices)
View Full-Text   |   Download PDF [796 KB, uploaded 22 July 2015]   |  

Abstract

This paper reports on an initial assessment of the direct growth of In(Ga)As/GaAs quantum dots (QDs) solar cells on nanostructured surface Si substrate by molecular beam epitaxy (MBE). The effect of inserting 40 InAs/InGaAs/GaAs QDs layers in the intrinsic region of the heterojunction pin-GaAs/n+-Si was evaluated using photocurrent spectroscopy in comparison with pin-GaAs/n+-Si and pin-GaAs/GaAs without QDs. The results reveal the clear contribution of the QDs layers to the improvement of the spectral response up to 1200 nm. The novel structure has been studied by X ray diffraction (XRD), photoluminescence spectroscopy (PL) and transmission electron microscopy (TEM). These results provide considerable insights into low cost III-V material-based solar cells. View Full-Text
Keywords: III-V materials for solar cells; Si substrate; molecular beam epitaxy; solar cell III-V materials for solar cells; Si substrate; molecular beam epitaxy; solar cell
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Azeza, B.; Hadj Alouane, M.H.; Ilahi, B.; Patriarche, G.; Sfaxi, L.; Fouzri, A.; Maaref, H.; M’ghaieth, R. Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate. Materials 2015, 8, 4544-4552.

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