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Materials 2015, 8(2), 600-610; doi:10.3390/ma8020600

Method for Aluminum Oxide Thin Films Prepared through Low Temperature Atomic Layer Deposition for Encapsulating Organic Electroluminescent Devices

Computer Science and Technology Department, Jilin University, Changchun 130012, Jilin, China
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Authors to whom correspondence should be addressed.
Academic Editor: Erik Reimhult
Received: 5 November 2014 / Accepted: 27 January 2015 / Published: 10 February 2015
(This article belongs to the Section Energy Materials)
View Full-Text   |   Download PDF [1017 KB, uploaded 10 February 2015]   |  

Abstract

Preparation of dense alumina (Al2O3) thin film through atomic layer deposition (ALD) provides a pathway to achieve the encapsulation of organic light emitting devices (OLED). Unlike traditional ALD which is usually executed at higher reaction n temperatures that may affect the performance of OLED, this application discusses the development on preparation of ALD thin film at a low temperature. One concern of ALD is the suppressing effect of ambient temperature on uniformity of thin film. To mitigate this issue, the pumping time in each reaction cycle was increased during the preparation process, which removed reaction byproducts and inhibited the formation of vacancies. As a result, the obtained thin film had both high uniformity and density properties, which provided an excellent encapsulation performance. The results from microstructure morphology analysis, water vapor transmission rate, and lifetime test showed that the difference in uniformity between thin films prepared at low temperatures, with increased pumping time, and high temperatures was small and there was no obvious influence of increased pumping time on light emitting performance. Meanwhile, the permeability for water vapor of the thin film prepared at a low temperature was found to reach as low as 1.5 × 10−4 g/(m2·day) under ambient conditions of 25 °C and 60% relative humidity, indicating a potential extension in the lifetime for the OLED. View Full-Text
Keywords: atomic layer deposition; lower temperature; uniform thin film atomic layer deposition; lower temperature; uniform thin film
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Li, H.-Y.; Liu, Y.-F.; Duan, Y.; Yang, Y.-Q.; Lu, Y.-N. Method for Aluminum Oxide Thin Films Prepared through Low Temperature Atomic Layer Deposition for Encapsulating Organic Electroluminescent Devices. Materials 2015, 8, 600-610.

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