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Materials 2015, 8(2), 561-574; doi:10.3390/ma8020561

In Situ Hall Effect Monitoring of Vacuum Annealing of In2O3:H Thin Films

1
Surface Science Division, Department of Materials- and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, Darmstadt 64287, Germany
2
Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CP 526, CH-2002 Neuchâtel 2, Switzerland
*
Author to whom correspondence should be addressed.
Academic Editor: Giorgio Biasiol
Received: 19 December 2014 / Accepted: 29 January 2015 / Published: 6 February 2015
(This article belongs to the Section Energy Materials)
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Abstract

Hydrogen doped In2O3 thin films were prepared by room temperature sputter deposition with the addition of H2O to the sputter gas. By subsequent vacuum annealing, the films obtain high mobility up to 90 cm2/Vs. The films were analyzed in situ by X-ray photoelectron spectroscopy (XPS) and ex situ by X-ray diffraction (XRD), optical transmission and Hall effect measurements. Furthermore, we present results from in situ Hall effect measurements during vacuum annealing of In2O3:H films, revealing distinct dependence of carrier concentration and mobility with time at different annealing temperatures. We suggest hydrogen passivation of grain boundaries as the main reason for the high mobility obtained with In2O3:H films. View Full-Text
Keywords: H-doped indium oxide; Hall effect; grain boundary passivation; hydrogen; X-ray photoelectron spectroscopy (XPS) H-doped indium oxide; Hall effect; grain boundary passivation; hydrogen; X-ray photoelectron spectroscopy (XPS)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Wardenga, H.F.; Frischbier, M.V.; Morales-Masis, M.; Klein, A. In Situ Hall Effect Monitoring of Vacuum Annealing of In2O3:H Thin Films. Materials 2015, 8, 561-574.

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