In Situ Hall Effect Monitoring of Vacuum Annealing of In2O3:H Thin Films
AbstractHydrogen doped In2O3 thin films were prepared by room temperature sputter deposition with the addition of H2O to the sputter gas. By subsequent vacuum annealing, the films obtain high mobility up to 90 cm2/Vs. The films were analyzed in situ by X-ray photoelectron spectroscopy (XPS) and ex situ by X-ray diffraction (XRD), optical transmission and Hall effect measurements. Furthermore, we present results from in situ Hall effect measurements during vacuum annealing of In2O3:H films, revealing distinct dependence of carrier concentration and mobility with time at different annealing temperatures. We suggest hydrogen passivation of grain boundaries as the main reason for the high mobility obtained with In2O3:H films. View Full-Text
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Wardenga, H.F.; Frischbier, M.V.; Morales-Masis, M.; Klein, A. In Situ Hall Effect Monitoring of Vacuum Annealing of In2O3:H Thin Films. Materials 2015, 8, 561-574.
Wardenga HF, Frischbier MV, Morales-Masis M, Klein A. In Situ Hall Effect Monitoring of Vacuum Annealing of In2O3:H Thin Films. Materials. 2015; 8(2):561-574.Chicago/Turabian Style
Wardenga, Hans F.; Frischbier, Mareike V.; Morales-Masis, Monica; Klein, Andreas. 2015. "In Situ Hall Effect Monitoring of Vacuum Annealing of In2O3:H Thin Films." Materials 8, no. 2: 561-574.