Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel
AbstractIn this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si0.57Ge0.43/Si) through microwave annealing (MWA) ranging from 200 to 470 °C for 150 s in N2 ambient. MWA has the advantage of being diffusion-less during activation, having a low-temperature process, have a lower junction leakage current, and having low sheet resistance (Rs) and contact resistivity. In our study, a 20 nm NiSiGe Schottky junction was formed by TEM and XRD analysis at MWA 390 °C. The NiSiGe/n-Si Schottky junction exhibits the highest forward/reverse current (ION/IOFF) ratio of ~3 × 105. The low temperature MWA is a very promising thermal process technology for NiSiGe Schottky junction manufacturing. View Full-Text
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Lin, Y.-H.; Tsai, Y.-H.; Hsu, C.-C.; Luo, G.-L.; Lee, Y.-J.; Chien, C.-H. Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel. Materials 2015, 8, 7519-7523.
Lin Y-H, Tsai Y-H, Hsu C-C, Luo G-L, Lee Y-J, Chien C-H. Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel. Materials. 2015; 8(11):7519-7523.Chicago/Turabian Style
Lin, Yu-Hsien; Tsai, Yi-He; Hsu, Chung-Chun; Luo, Guang-Li; Lee, Yao-Jen; Chien, Chao-Hsin. 2015. "Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel." Materials 8, no. 11: 7519-7523.