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Materials 2015, 8(11), 7519-7523; doi:10.3390/ma8115403

Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel

1
Department of Electronic Engineering, National United University, Miaoli 36003, Taiwan
2
Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu 30010, Taiwan
3
National Nano Device Laboratories, Hsinchu 30010, Taiwan
*
Author to whom correspondence should be addressed.
Academic Editor: Jung Ho Je
Received: 10 September 2015 / Revised: 27 October 2015 / Accepted: 5 November 2015 / Published: 10 November 2015
(This article belongs to the Section Structure Analysis and Characterization)
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Abstract

In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si0.57Ge0.43/Si) through microwave annealing (MWA) ranging from 200 to 470 °C for 150 s in N2 ambient. MWA has the advantage of being diffusion-less during activation, having a low-temperature process, have a lower junction leakage current, and having low sheet resistance (Rs) and contact resistivity. In our study, a 20 nm NiSiGe Schottky junction was formed by TEM and XRD analysis at MWA 390 °C. The NiSiGe/n-Si Schottky junction exhibits the highest forward/reverse current (ION/IOFF) ratio of ~3 × 105. The low temperature MWA is a very promising thermal process technology for NiSiGe Schottky junction manufacturing. View Full-Text
Keywords: germanium; microwave annealing; NiSiGe; Schottky junction germanium; microwave annealing; NiSiGe; Schottky junction
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Lin, Y.-H.; Tsai, Y.-H.; Hsu, C.-C.; Luo, G.-L.; Lee, Y.-J.; Chien, C.-H. Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel. Materials 2015, 8, 7519-7523.

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