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Materials 2015, 8(10), 7084-7093; doi:10.3390/ma8105364

Single-Crystal Y2O3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition

1,†
,
2,†
,
1,†
,
1
,
2
,
3,* , 4,* and 1,2
1
Department of Physics, National Taiwan University, Taipei 10617, Taiwan
2
Graduate Institute of Applied Physics, National Taiwan University, Taipei 10617, Taiwan
3
National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
4
Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
These authors contributed equally to this work.
*
Authors to whom correspondence should be addressed.
Academic Editor: Jan Ingo Flege
Received: 9 August 2015 / Revised: 25 September 2015 / Accepted: 12 October 2015 / Published: 19 October 2015
(This article belongs to the Special Issue Epitaxial Materials 2015)
View Full-Text   |   Download PDF [1926 KB, uploaded 19 October 2015]   |  

Abstract

Single-crystal atomic-layer-deposited (ALD) Y\(_{\mathrm{2}}\)O\(_{\mathrm{3}}\) films 2 nm thick were epitaxially grown on molecular beam epitaxy (MBE) GaAs(001)-4 \(\times\) 6 and GaAs(111)A-2 \(\times\) 2 reconstructed surfaces. The in-plane epitaxy between the ALD-oxide films and GaAs was observed using \textit{in-situ} reflection high-energy electron diffraction in our uniquely designed MBE/ALD multi-chamber system. More detailed studies on the crystallography of the hetero-structures were carried out using high-resolution synchrotron radiation X-ray diffraction. When deposited on GaAs(001), the Y\(_{\mathrm{2}}\)O\(_{\mathrm{3}}\) films are of a cubic phase and have (110) as the film normal, with the orientation relationship being determined: Y\(_{\mathrm{2}}\)O\(_{\mathrm{3}}\)(\(110\))[\(001\)][\(\overline{1}10\)]//GaAs(\(001\))[\(110\)][\(1\overline{1}0\)]. On GaAs(\(111\))A, the Y\(_{\mathrm{2}}\)O\(_{\mathrm{3}}\) films are also of a cubic phase with (\(111\)) as the film normal, having the orientation relationship of Y\(_{\mathrm{2}}\)O\(_{\mathrm{3}}\)(\(111\))[\(2\overline{1}\overline{1}\)] [\(01\overline{1}\)]//GaAs (\(111\)) [\(\overline{2}11\)][\(0\overline{1}1\)]. The relevant orientation for the present/future integrated circuit platform is (\(001\)). The ALD-Y\(_{\mathrm{2}}\)O\(_{\mathrm{3}}\)/GaAs(\(001\))-4 \(\times\) 6 has shown excellent electrical properties. These include small frequency dispersion in the capacitance-voltage CV curves at accumulation of ~7% and ~14% for the respective p- and n-type samples with the measured frequencies of 1 MHz to 100 Hz. The interfacial trap density (Dit) is low of ~10\(^{12}\) cm\(^{−2}\)eV\(^{−1}\) as extracted from measured quasi-static CVs. The frequency dispersion at accumulation and the D\(_{it}\) are the lowest ever achieved among all the ALD-oxides on GaAs(\(001\)). View Full-Text
Keywords: atomic layer deposition; single crystal; epitaxial; molecular beam epitaxy; (001) and (111) orientations; interfacial trap density atomic layer deposition; single crystal; epitaxial; molecular beam epitaxy; (001) and (111) orientations; interfacial trap density
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Lin, Y.H.; Cheng, C.K.; Chen, K.H.; Fu, C.H.; Chang, T.W.; Hsu, C.H.; Kwo, J.; Hong, M. Single-Crystal Y2O3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition. Materials 2015, 8, 7084-7093.

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