Materials 2015, 8(10), 6926-6934; https://doi.org/10.3390/ma8105352
Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors
1
Department of Applied Materials Engineering, Hanbat National University, Daejeon 305-719, Korea
2
School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756, Korea
3
Department of Materials Chemistry and Engineering, Konkuk University, Seoul 143-701, Korea
*
Authors to whom correspondence should be addressed.
Academic Editor: Dirk Poelman
Received: 27 August 2015 / Revised: 23 September 2015 / Accepted: 8 October 2015 / Published: 12 October 2015
Abstract
A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT) was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA) self-assembled monolayer (SAM) treatment of the AlOx was employed in order to realize high-performance (>0.4 cm2/Vs saturation mobility) and low-operation-voltage (<5 V) diketopyrrolopyrrole (DPP)-based OTFTs on an ultra-thin polyimide film (3-μm thick). Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages. View Full-TextKeywords:
organic thin film transistor; gate dielectric layer; self-assembled monolayer; photochemical activation; low-temperature sol-gel method; low-voltage operation
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Kim, J.; Park, C.J.; Yi, G.; Choi, M.-S.; Park, S.K. Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors. Materials 2015, 8, 6926-6934.
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