Materials 2015, 8(10), 6926-6934; doi:10.3390/ma8105352
Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors
1
Department of Applied Materials Engineering, Hanbat National University, Daejeon 305-719, Korea
2
School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756, Korea
3
Department of Materials Chemistry and Engineering, Konkuk University, Seoul 143-701, Korea
*
Authors to whom correspondence should be addressed.
Academic Editor: Dirk Poelman
Received: 27 August 2015 / Revised: 23 September 2015 / Accepted: 8 October 2015 / Published: 12 October 2015
Abstract
A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT) was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA) self-assembled monolayer (SAM) treatment of the AlOx was employed in order to realize high-performance (>0.4 cm2/Vs saturation mobility) and low-operation-voltage (<5 V) diketopyrrolopyrrole (DPP)-based OTFTs on an ultra-thin polyimide film (3-μm thick). Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages. View Full-TextKeywords:
organic thin film transistor; gate dielectric layer; self-assembled monolayer; photochemical activation; low-temperature sol-gel method; low-voltage operation
▼
Figures
Figure 1
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
Share & Cite This Article
MDPI and ACS Style
Kim, J.; Park, C.J.; Yi, G.; Choi, M.-S.; Park, S.K. Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors. Materials 2015, 8, 6926-6934.
Related Articles
Article Metrics
Comments
[Return to top]
Materials
EISSN 1996-1944
Published by MDPI AG, Basel, Switzerland
RSS
E-Mail Table of Contents Alert