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Materials 2014, 7(9), 6843-6852; doi:10.3390/ma7096843

A Label-Free Immunosensor for IgG Based on an Extended-Gate Type Organic Field Effect Transistor

1
Research Center for Organic Electronics (ROEL), Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan
2
Biomedical Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 6, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8566, Japan
3
Health Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 2217-14 Hayashi, Takamatsu, Kagawa 761-0395, Japan
*
Author to whom correspondence should be addressed.
Received: 31 July 2014 / Revised: 7 September 2014 / Accepted: 16 September 2014 / Published: 22 September 2014
(This article belongs to the Special Issue Organic Transistor)
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Abstract

A novel biosensor for immunoglobulin G (IgG) detection based on an extended-gate type organic field effect transistor (OFET) has been developed that possesses an anti-IgG antibody on its extended-gate electrode and can be operated below 3 V. The titration results from the target IgG in the presence of a bovine serum albumin interferent, clearly exhibiting a negative shift in the OFET transfer curve with increasing IgG concentration. This is presumed to be due an interaction between target IgG and the immobilized anti-IgG antibody on the extended-gate electrode. As a result, a linear range from 0 to 10 µg/mL was achieved with a relatively low detection limit of 0.62 µg/mL (=4 nM). We believe that these results open up opportunities for applying extended-gate-type OFETs to immunosensing. View Full-Text
Keywords: organic field effect transistor; immunosensor; label-free; immunoglobulin G; self-assembled monolayer organic field effect transistor; immunosensor; label-free; immunoglobulin G; self-assembled monolayer
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MDPI and ACS Style

Minamiki, T.; Minami, T.; Kurita, R.; Niwa, O.; Wakida, S.-I.; Fukuda, K.; Kumaki, D.; Tokito, S. A Label-Free Immunosensor for IgG Based on an Extended-Gate Type Organic Field Effect Transistor. Materials 2014, 7, 6843-6852.

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