A Label-Free Immunosensor for IgG Based on an Extended-Gate Type Organic Field Effect Transistor
AbstractA novel biosensor for immunoglobulin G (IgG) detection based on an extended-gate type organic field effect transistor (OFET) has been developed that possesses an anti-IgG antibody on its extended-gate electrode and can be operated below 3 V. The titration results from the target IgG in the presence of a bovine serum albumin interferent, clearly exhibiting a negative shift in the OFET transfer curve with increasing IgG concentration. This is presumed to be due an interaction between target IgG and the immobilized anti-IgG antibody on the extended-gate electrode. As a result, a linear range from 0 to 10 µg/mL was achieved with a relatively low detection limit of 0.62 µg/mL (=4 nM). We believe that these results open up opportunities for applying extended-gate-type OFETs to immunosensing. View Full-Text
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Minamiki, T.; Minami, T.; Kurita, R.; Niwa, O.; Wakida, S.-I.; Fukuda, K.; Kumaki, D.; Tokito, S. A Label-Free Immunosensor for IgG Based on an Extended-Gate Type Organic Field Effect Transistor. Materials 2014, 7, 6843-6852.
Minamiki T, Minami T, Kurita R, Niwa O, Wakida S-I, Fukuda K, Kumaki D, Tokito S. A Label-Free Immunosensor for IgG Based on an Extended-Gate Type Organic Field Effect Transistor. Materials. 2014; 7(9):6843-6852.Chicago/Turabian Style
Minamiki, Tsukuru; Minami, Tsuyoshi; Kurita, Ryoji; Niwa, Osamu; Wakida, Shin-ichi; Fukuda, Kenjiro; Kumaki, Daisuke; Tokito, Shizuo. 2014. "A Label-Free Immunosensor for IgG Based on an Extended-Gate Type Organic Field Effect Transistor." Materials 7, no. 9: 6843-6852.