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Materials 2014, 7(1), 365-374; doi:10.3390/ma7010365
Article

Rapid Growth of Nanostructured Diamond Film on Silicon and Ti–6Al–4V Alloy Substrates

1,* , 1
,
1
 and
2
1 Department of Physics, University of Alabama at Birmingham, Birmingham, AL 35294, USA 2 Laser Inertial Fusion Energy, Lawrence Livermore National Laboratory, Livermore, CA 94550, USA
* Author to whom correspondence should be addressed.
Received: 18 October 2013 / Revised: 25 November 2013 / Accepted: 2 January 2014 / Published: 13 January 2014
(This article belongs to the Section Manufacturing Processes and Systems)
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Abstract

Nanostructured diamond (NSD) films were grown on silicon and Ti–6Al–4V alloy substrates by microwave plasma chemical vapor deposition (MPCVD). NSD Growth rates of 5 µm/h on silicon, and 4 µm/h on Ti–6Al–4V were achieved. In a chemistry of H2/CH4/N2, varying ratios of CH4/H2 and N2/CH4 were employed in this research and their effect on the resulting diamond films were studied by X-ray photoelectron spectroscopy, Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. As a result of modifying the stock cooling stage of CVD system, we were able to utilize plasma with high power densities in our NSD growth experiments, enabling us to achieve high growth rates. Substrate temperature and N2/CH4 ratio have been found to be key factors in determining the diamond film quality. NSD films grown as part of this study were shown to contain 85% to 90% sp3 bonded carbon.
Keywords: MPCVD; nanostructured diamond; film growth; thin film structure and morphology MPCVD; nanostructured diamond; film growth; thin film structure and morphology
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Samudrala, G.K.; Vohra, Y.K.; Walock, M.J.; Miles, R. Rapid Growth of Nanostructured Diamond Film on Silicon and Ti–6Al–4V Alloy Substrates. Materials 2014, 7, 365-374.

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