Full-Field Strain Mapping at a Ge/Si Heterostructure Interface
Abstract
:1. Introduction
2. Theory
2.1. Strain of Edge Dislocation Given by Peierls-Nabarro Model
2.2. Strain of Edge Dislocation Given by Foreman Model
3. Experimental Methods
3.1. Specimen Preparation
3.2. Electron Microscopy
3.3. Geometric Phase Analysis
3.4. Peak Pairs Analysis
4. Results and Discussion
4.1. Type of Misfit Dislocations at the Ge/Si Heterostructure Interface
4.2. Effect of Mask Size on the Strain Calculation Results with GPA
4.3. Effect of Mask Size on the Strain Calculation Results with PPA
4.4. Theoretical Calculation
a | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
---|---|---|---|---|---|---|---|---|---|
F(0.1g) | 0.70402 | 0.76388 | 0.82277 | 0.86558 | 0.89697 | 0.92071 | 0.93912 | 0.95377 | 0.96563 |
F(0.2g) | 0.72084 | 0.78213 | 0.84243 | 0.88626 | 0.91840 | 0.94270 | 0.96155 | 0.97655 | 0.98870 |
F(0.3g) | 0.80963 | 0.87846 | 0.94619 | 0.99542 | 1.03152 | 1.05881 | 1.07999 | 1.09683 | 1.11048 |
a | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
---|---|---|---|---|---|---|---|---|---|
F(0.1g) | 0.81862 | 0.88822 | 0.95670 | 1.00648 | 1.04298 | 1.07058 | 1.09199 | 1.10902 | 1.12282 |
F(0.2g) | 1.01457 | 1.10084 | 1.18571 | 1.24740 | 1.29264 | 1.32684 | 1.35337 | 1.37449 | 1.39158 |
5. Conclusions
Acknowledgments
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Li, J.; Zhao, C.; Xing, Y.; Su, S.; Cheng, B. Full-Field Strain Mapping at a Ge/Si Heterostructure Interface. Materials 2013, 6, 2130-2142. https://doi.org/10.3390/ma6062130
Li J, Zhao C, Xing Y, Su S, Cheng B. Full-Field Strain Mapping at a Ge/Si Heterostructure Interface. Materials. 2013; 6(6):2130-2142. https://doi.org/10.3390/ma6062130
Chicago/Turabian StyleLi, Jijun, Chunwang Zhao, Yongming Xing, Shaojian Su, and Buwen Cheng. 2013. "Full-Field Strain Mapping at a Ge/Si Heterostructure Interface" Materials 6, no. 6: 2130-2142. https://doi.org/10.3390/ma6062130