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Materials 2010, 3(11), 4950-4964; doi:10.3390/ma3114950
Review

Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory

*  and
National Institute of Advanced Industrial Science and Technology / Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
* Author to whom correspondence should be addressed.
Received: 18 October 2010 / Revised: 12 November 2010 / Accepted: 16 November 2010 / Published: 18 November 2010
(This article belongs to the Special Issue Advances in Ferroelectric & Piezoelectric Materials)
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Abstract

We have investigated ferroelectric-gate field-effect transistors (FeFETs) with Pt/SrBi2Ta2O9/(HfO2)x(Al2O3)1−x (Hf-Al-O) and Pt/SrBi2Ta2O9/HfO2 gate stacks. The fabricated FeFETs have excellent data retention characteristics: The drain current ratio between the on- and off-states of a FeFET was more than 2 × 106 after 12 days, and the decreasing rate of this ratio was so small that the extrapolated drain current ratio after 10 years is larger than 1 × 105. A fabricated self-aligned gate Pt/SrBi2Ta2O9/Hf-Al-O/Si FET revealed a sufficiently large drain current ratio of 2.4 × 105 after 33.5 day, which is 6.5 × 104 after 10 years by extrapolation. The developed FeFETs also revealed stable retention characteristics at an elevated temperature up to 120 °C and had small transistor threshold voltage (Vth) distribution. The Vth can be adjusted by controlling channel impurity densities for both n-channel and p-channel FeFETs. These performances are now suitable to integrated circuit application with nonvolatile functions. Fundamental properties for the applications to ferroelectric-CMOS nonvolatile logic-circuits and to ferroelectric-NAND flash memories are demonstrated.
Keywords: FeFET; semiconductor memory; nonvolatile memory; nonvolatile logic FeFET; semiconductor memory; nonvolatile memory; nonvolatile logic
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).
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Sakai, S.; Takahashi, M. Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory. Materials 2010, 3, 4950-4964.

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