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Materials 2010, 3(11), 4950-4964; doi:10.3390/ma3114950
Review

Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory

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Received: 18 October 2010; in revised form: 12 November 2010 / Accepted: 16 November 2010 / Published: 18 November 2010
(This article belongs to the Special Issue Advances in Ferroelectric & Piezoelectric Materials)
Download PDF [1588 KB, uploaded 18 November 2010]
Abstract: We have investigated ferroelectric-gate field-effect transistors (FeFETs) with Pt/SrBi2Ta2O9/(HfO2)x(Al2O3)1−x (Hf-Al-O) and Pt/SrBi2Ta2O9/HfO2 gate stacks. The fabricated FeFETs have excellent data retention characteristics: The drain current ratio between the on- and off-states of a FeFET was more than 2 × 106 after 12 days, and the decreasing rate of this ratio was so small that the extrapolated drain current ratio after 10 years is larger than 1 × 105. A fabricated self-aligned gate Pt/SrBi2Ta2O9/Hf-Al-O/Si FET revealed a sufficiently large drain current ratio of 2.4 × 105 after 33.5 day, which is 6.5 × 104 after 10 years by extrapolation. The developed FeFETs also revealed stable retention characteristics at an elevated temperature up to 120 °C and had small transistor threshold voltage (Vth) distribution. The Vth can be adjusted by controlling channel impurity densities for both n-channel and p-channel FeFETs. These performances are now suitable to integrated circuit application with nonvolatile functions. Fundamental properties for the applications to ferroelectric-CMOS nonvolatile logic-circuits and to ferroelectric-NAND flash memories are demonstrated.
Keywords: FeFET; semiconductor memory; nonvolatile memory; nonvolatile logic FeFET; semiconductor memory; nonvolatile memory; nonvolatile logic
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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MDPI and ACS Style

Sakai, S.; Takahashi, M. Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory. Materials 2010, 3, 4950-4964.

AMA Style

Sakai S, Takahashi M. Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory. Materials. 2010; 3(11):4950-4964.

Chicago/Turabian Style

Sakai, Shigeki; Takahashi, Mitsue. 2010. "Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory." Materials 3, no. 11: 4950-4964.


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