Materials 2010, 3(1), 536-562; doi:10.3390/ma3010536

Porous Dielectrics in Microelectronic Wiring Applications

Received: 7 December 2009; in revised form: 1 January 2010 / Accepted: 14 January 2010 / Published: 18 January 2010
(This article belongs to the Special Issue Porous Materials)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract: Porous insulators are utilized in the wiring structure of microelectronic devices as a means of reducing, through low dielectric permittivity, power consumption and signal delay in integrated circuits. They are typically based on low density modifications of amorphous SiO2 known as SiCOH or carbon-doped oxides, in which free volume is created through the removal of labile organic phases. Porous dielectrics pose a number of technological challenges related to chemical and mechanical stability, particularly in regard to semiconductor processing methods. This review discusses porous dielectric film preparation techniques, key issues encountered, and mitigation strategies.
Keywords: porosity; dielectric; interconnect; microelectronic; integrated circuit; semiconductor
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MDPI and ACS Style

McGahay, V. Porous Dielectrics in Microelectronic Wiring Applications. Materials 2010, 3, 536-562.

AMA Style

McGahay V. Porous Dielectrics in Microelectronic Wiring Applications. Materials. 2010; 3(1):536-562.

Chicago/Turabian Style

McGahay, Vincent. 2010. "Porous Dielectrics in Microelectronic Wiring Applications." Materials 3, no. 1: 536-562.

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