Materials 2010, 3(1), 536-562; doi:10.3390/ma3010536
Porous Dielectrics in Microelectronic Wiring Applications
International Business Machines Corporation, 2070 Route 52, Hopewell Junction, NY 12533, USA
Received: 7 December 2009 / Revised: 1 January 2010 / Accepted: 14 January 2010 / Published: 18 January 2010
(This article belongs to the Special Issue Porous Materials)
Abstract
Porous insulators are utilized in the wiring structure of microelectronic devices as a means of reducing, through low dielectric permittivity, power consumption and signal delay in integrated circuits. They are typically based on low density modifications of amorphous SiO2 known as SiCOH or carbon-doped oxides, in which free volume is created through the removal of labile organic phases. Porous dielectrics pose a number of technological challenges related to chemical and mechanical stability, particularly in regard to semiconductor processing methods. This review discusses porous dielectric film preparation techniques, key issues encountered, and mitigation strategies. View Full-TextKeywords:
porosity; dielectric; interconnect; microelectronic; integrated circuit; semiconductor
▼
Figures
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).
Scifeed alert for new publications
Never miss any articles matching your research from any publisher- Get alerts for new papers matching your research
- Find out the new papers from selected authors
- Updated daily for 49'000+ journals and 6000+ publishers
- Define your Scifeed now
Share & Cite This Article
MDPI and ACS Style
McGahay, V. Porous Dielectrics in Microelectronic Wiring Applications. Materials 2010, 3, 536-562.
Related Articles
Article Metrics
Comments
[Return to top]
Materials
EISSN 1996-1944
Published by MDPI AG, Basel, Switzerland
RSS
E-Mail Table of Contents Alert