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Materials 2018, 11(9), 1613; https://doi.org/10.3390/ma11091613

Terahertz Spectroscopy of Amorphous WSe2 and MoSe2 Thin Films

1
Dipartimento di Fisica, Università di Napoli “Federico II,” Piazzale Tecchio 80, I-80125 Naples, Italy
2
CNR-SPIN, UOS Napoli, via Cinthia, I-80126 Naples, Italy
3
CRANN & AMBER Center, School of Chemistry, Trinity College Dublin, Dublin 2, Ireland
4
School of Engineering, Newcastle University, Merz Court, Newcastle upon Tyne NE1 7RU, UK
5
Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, Universität der Bundeswehr München, Werner-Heisenberg-Weg 39, EIT2, 85577 Neubiberg, Germany
*
Author to whom correspondence should be addressed.
Received: 10 August 2018 / Revised: 28 August 2018 / Accepted: 30 August 2018 / Published: 4 September 2018
(This article belongs to the Special Issue Materials for Sources and Detectors in the GIGA-TERA-MIR Range)
Full-Text   |   PDF [1625 KB, uploaded 4 September 2018]   |  

Abstract

Time domain spectroscopy is used to determine the THz electromagnetic response of amorphous transition metal dichalcogenides WSe2 and MoSe2 in thin-film form. The dielectric function is obtained using a rigorous transmission model to account for the large etalon effect. The Drude–Smith model is applied to retrieve the dielectric function, and from there, the sample conductivity. View Full-Text
Keywords: THz time domain spectroscopy; transition metal dichalcogenides; dielectric function; absorption; refractive index THz time domain spectroscopy; transition metal dichalcogenides; dielectric function; absorption; refractive index
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
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Papari, G.; Koral, C.; Hallam, T.; Duesberg, G.S.; Andreone, A. Terahertz Spectroscopy of Amorphous WSe2 and MoSe2 Thin Films. Materials 2018, 11, 1613.

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