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Materials 2018, 11(6), 926; https://doi.org/10.3390/ma11060926

Crystal Structure and Thermoelectric Properties of Lightly Substituted Higher Manganese Silicides

Department of Applied Physics, Graduate School of Engineering, Tohoku University, 6-6-05 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Received: 27 April 2018 / Revised: 26 May 2018 / Accepted: 29 May 2018 / Published: 30 May 2018
(This article belongs to the Special Issue Half-Heusler, Silicide and Zintl-type Thermoelectric Materials)
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Abstract

The dissipation of MnSi layered precipitates during solidification is critical for further enhancement of the thermoelectric properties of the higher manganese silicides. We have investigated the effects of partial substitution of V in Mn sites and of Ge in Si sites on the crystal structures and thermoelectric properties of these silicides in detail. As previously reported, a small amount of V-substitution is quite effective in completely dissipating the MnSi striations; in contrast, a small proportion of these MnSi striations always remains present in the Ge-substitution case, even in the vicinity of the Ge solubility limits. For completely MnSi-dissipated samples, domain separation of the regular and highly strained arrangements of the Si atoms is realized. This domain separation suppresses the deterioration of the carrier mobility of the partially V-substituted samples and maintains even higher electrical conductivity to yield a high thermoelectric power factor of ∼2.3 mW/K 2 m at higher temperatures. View Full-Text
Keywords: higher manganese silicide; solid solution; incommensurate composite crystal; MnSi striation; thermoelectric properties; crystal structure; domain separation higher manganese silicide; solid solution; incommensurate composite crystal; MnSi striation; thermoelectric properties; crystal structure; domain separation
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Miyazaki, Y.; Hamada, H.; Nagai, H.; Hayashi, K. Crystal Structure and Thermoelectric Properties of Lightly Substituted Higher Manganese Silicides. Materials 2018, 11, 926.

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