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Materials 2018, 11(2), 228; https://doi.org/10.3390/ma11020228

Radiation Resistance of the U(Al, Si)3 Alloy: Ion-Induced Disordering

1
Department of Materials Engineering, Ben-Gurion University of the Negev, P.O. Box 653, Beer-Sheva 8410501, Israel
2
Nuclear Physics Institute, Academy of Sciences of the Czech Republic, Hlavni 130, Husinec-Rez 68250, Czech Republic
3
South-Ukrainian National Pedagogical University after K. D. Ushinskij, Odessa 65000, Ukraine
4
Nuclear Research Center-Negev, P.O. Box 9001, Beer-Sheva 8419001, Israel
*
Author to whom correspondence should be addressed.
Received: 17 January 2018 / Revised: 28 January 2018 / Accepted: 31 January 2018 / Published: 2 February 2018
(This article belongs to the Special Issue Intermetallic Alloys: Fabrication, Properties and Applications 2017)
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Abstract

During the exploitation of nuclear reactors, various U-Al based ternary intermetallides are formed in the fuel-cladding interaction layer. Structure and physical properties of these intermetallides determine the radiation resistance of cladding and, ultimately, the reliability and lifetime of the nuclear reactor. In current research, U(Al, Si)3 composition was studied as a potential constituent of an interaction layer. Phase content of the alloy of an interest was ordered U(Al, Si)3, structure of which was reported earlier, and pure Al (constituting less than 20 vol % of the alloy). This alloy was investigated prior and after the irradiation performed by Ar ions at 30 keV. The irradiation was performed on the transmission electron microscopy (TEM, JEOL, Japan) samples, characterized before and after the irradiation process. Irradiation induced disorder accompanied by stress relief. Furthermore, it was found that there is a dose threshold for disordering of the crystalline matter in the irradiated region. Irradiation at doses equal or higher than this threshold resulted in almost solely disordered phase. Using the program “Stopping and Range of Ions in Matter” (SRIM), the parameters of penetration of Ar ions into the irradiated samples were estimated. Based on these estimations, the dose threshold for ion-induced disordering of the studied material was assessed. View Full-Text
Keywords: U-Al-Si; ion-irradiation; transmission electron microscopy; structural defects; disordering U-Al-Si; ion-irradiation; transmission electron microscopy; structural defects; disordering
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
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Meshi, L.; Yaniv, G.; Horak, P.; Vacik, J.; Mykytenko, N.; Rafailov, G.; Dahan, I.; Fuks, D.; Kiv, A. Radiation Resistance of the U(Al, Si)3 Alloy: Ion-Induced Disordering. Materials 2018, 11, 228.

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