Electroless Nickel Deposition for Front Side Metallization of Silicon Solar Cells
AbstractIn this work, nickel thin films were deposited on texture silicon by electroless plated deposition. The electroless-deposited Ni layers were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy (EDS), X-ray diffraction analysis (XRD), and sheet resistance measurement. The results indicate that the dominant phase was Ni2Si and NiSi in samples annealed at 300–800 °C. Sheet resistance values were found to correlate well with the surface morphology obtained by SEM and the results of XRD diffraction. The Cu/Ni contact system was used to fabricate solar cells by using two different activating baths. The open circuit voltage (Voc) of the Cu/Ni samples, before and after annealing, was measured under air mass (AM) 1.5 conditions to determine solar cell properties. The results show that open circuit voltage of a solar cell can be enhanced when the activation solution incorporated hydrofluoric acid (HF). This is mainly attributed to the native silicon oxide layer that can be decreased and/or removed by HF with the corresponding reduction of series resistance. View Full-Text
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Hsieh, S.H.; Hsieh, J.M.; Chen, W.J.; Chuang, C.C. Electroless Nickel Deposition for Front Side Metallization of Silicon Solar Cells. Materials 2017, 10, 942.
Hsieh SH, Hsieh JM, Chen WJ, Chuang CC. Electroless Nickel Deposition for Front Side Metallization of Silicon Solar Cells. Materials. 2017; 10(8):942.Chicago/Turabian Style
Hsieh, Shu H.; Hsieh, Jhong M.; Chen, Wen J.; Chuang, Chia C. 2017. "Electroless Nickel Deposition for Front Side Metallization of Silicon Solar Cells." Materials 10, no. 8: 942.
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