Mie-Metamaterials-Based Thermal Emitter for Near-Field Thermophotovoltaic Systems
Department of Mechanical, Industrial and Systems Engineering, University of Rhode Island, Kingston, RI 02881, USA
College of Life Sciences, Northwest University, Xi’an 710069, China
National Engineering Research Center for Miniaturized Detection Systems, Northwest University, Xi’an 710069, China
Author to whom correspondence should be addressed.
Received: 28 June 2017 / Revised: 26 July 2017 / Accepted: 29 July 2017 / Published: 31 July 2017
In this work, we theoretically analyze the performance characteristics of a near-field thermophotovoltaic system consisting a Mie-metamaterial emitter and GaSb-based photovoltaic cell at separations less than the thermal wavelength. The emitter consists of a tungsten nanoparticle-embedded thin film of SiO
deposited on bulk tungsten. Numerical results presented here are obtained using formulae derived from dyadic Green’s function formalism and Maxwell–Garnett-Mie theory. We show that via the inclusion of tungsten nanoparticles, the thin layer of SiO
acts like an effective medium that enhances selective radiative heat transfer for the photons above the band gap of GaSb. We analyze thermophotovoltaic (TPV) performance for various volume fractions of tungsten nanoparticles and thicknesses of SiO
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MDPI and ACS Style
Ghanekar, A.; Tian, Y.; Zhang, S.; Cui, Y.; Zheng, Y. Mie-Metamaterials-Based Thermal Emitter for Near-Field Thermophotovoltaic Systems. Materials 2017, 10, 885.
Ghanekar A, Tian Y, Zhang S, Cui Y, Zheng Y. Mie-Metamaterials-Based Thermal Emitter for Near-Field Thermophotovoltaic Systems. Materials. 2017; 10(8):885.
Ghanekar, Alok; Tian, Yanpei; Zhang, Sinong; Cui, Yali; Zheng, Yi. 2017. "Mie-Metamaterials-Based Thermal Emitter for Near-Field Thermophotovoltaic Systems." Materials 10, no. 8: 885.
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