Next Article in Journal
Wear Enhancement of Wheel-Rail Interaction by Ultrasonic Nanocrystalline Surface Modification Technique
Previous Article in Journal
Stress Corrosion Cracking Susceptibility of 304L Substrate and 308L Weld Metal Exposed to a Salt Spray
Article Menu
Issue 2 (February) cover image

Export Article

Open AccessArticle
Materials 2017, 10(2), 189; doi:10.3390/ma10020189

Boron Partitioning Coefficient above Unity in Laser Crystallized Silicon

Institute for Photovoltaics and Research Center SCoPE, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
*
Author to whom correspondence should be addressed.
Academic Editor: Jung Ho Je
Received: 9 November 2016 / Revised: 14 January 2017 / Accepted: 13 February 2017 / Published: 16 February 2017
(This article belongs to the Section Structure Analysis and Characterization)
View Full-Text   |   Download PDF [524 KB, uploaded 16 February 2017]   |  

Abstract

Boron pile-up at the maximum melt depth for laser melt annealing of implanted silicon has been reported in numerous papers. The present contribution examines the boron accumulation in a laser doping setting, without dopants initially incorporated in the silicon wafer. Our numerical simulation models laser-induced melting as well as dopant diffusion, and excellently reproduces the secondary ion mass spectroscopy-measured boron profiles. We determine a partitioning coefficient k p above unity with k p = 1 . 25 ± 0 . 05 and thermally-activated diffusivity D B , with a value D B ( 1687 K ) = ( 3 . 53 ± 0 . 44 ) × 10 4 cm 2 ·s 1 of boron in liquid silicon. For similar laser parameters and process conditions, our model predicts the anticipated boron profile of a laser doping experiment. View Full-Text
Keywords: solute trapping; rapid solidification; silicon; laser melting; boron doping solute trapping; rapid solidification; silicon; laser melting; boron doping
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Lill, P.C.; Dahlinger, M.; Köhler, J.R. Boron Partitioning Coefficient above Unity in Laser Crystallized Silicon. Materials 2017, 10, 189.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top