Next Article in Journal
Properties of Residue from Olive Oil Extraction as a Raw Material for Sustainable Construction Materials. Part I: Physical Properties
Previous Article in Journal
Evolution of Helium Bubbles and Discs in Irradiated 6H-SiC during Post-Implantation Annealing
Article Menu
Issue 2 (February) cover image

Export Article

Open AccessArticle
Materials 2017, 10(2), 102; doi:10.3390/ma10020102

Investigations on the Role of N2:(N2 + CH4) Ratio on the Growth of Hydrophobic Nanostructured Hydrogenated Carbon Nitride Thin Films by Plasma Enhanced Chemical Vapor Deposition at Low Temperature

Low Dimensional Materials Research Centre, Department of Physics, Faculty of Science, University of Malaya, Lembah Pantai, Kuala Lumpur 50603, Malaysia
*
Authors to whom correspondence should be addressed.
Academic Editor: Jonathan Phillips
Received: 18 November 2016 / Revised: 24 December 2016 / Accepted: 18 January 2017 / Published: 24 January 2017
(This article belongs to the Section Structure Analysis and Characterization)
View Full-Text   |   Download PDF [5058 KB, uploaded 24 January 2017]   |  

Abstract

Nanostructured hydrogenated carbon nitride (CNx:H) thin films were synthesized on a crystal silicon substrate at low deposition temperature by radio-frequency plasma-enhanced chemical vapor deposition (PECVD). Methane and nitrogen were the precursor gases used in this deposition process. The effects of N2 to the total gas flow rate ratio on the formation of CNx:H nanostructures were investigated. Field-emission scanning electron microscopy (FESEM), Auger electron spectroscopy (AES), Raman scattering, and Fourier transform of infrared spectroscopies (FTIR) were used to characterize the films. The atomic nitrogen to carbon ratio and sp2 bonds in the film structure showed a strong influence on its growth rate, and its overall structure is strongly influenced by even small changes in the N2:(N2 + CH4) ratio. The formation of fibrous CNx:H nanorod structures occurs at ratios of 0.7 and 0.75, which also shows improved surface hydrophobic characteristic. Analysis showed that significant presence of isonitrile bonds in a more ordered film structure were important criteria contributing to the formation of vertically-aligned nanorods. The hydrophobicity of the CNx:H surface improved with the enhancement in the vertical alignment and uniformity in the distribution of the fibrous nanorod structures. View Full-Text
Keywords: chemical vapor deposition; carbon nitride; nanostructures; hydrophobic chemical vapor deposition; carbon nitride; nanostructures; hydrophobic
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Khanis, N.H.; Ritikos, R.; Ahmad Kamal, S.A.; Abdul Rahman, S. Investigations on the Role of N2:(N2 + CH4) Ratio on the Growth of Hydrophobic Nanostructured Hydrogenated Carbon Nitride Thin Films by Plasma Enhanced Chemical Vapor Deposition at Low Temperature. Materials 2017, 10, 102.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top