Next Article in Journal
Computational Intelligence Approaches for Energy Load Forecasting in Smart Energy Management Grids: State of the Art, Future Challenges, and Research Directions
Previous Article in Journal
Control of a Charger/Discharger DC/DC Converter with Improved Disturbance Rejection for Bus Regulation
Article Menu
Issue 3 (March) cover image

Export Article

Open AccessArticle
Energies 2018, 11(3), 595; https://doi.org/10.3390/en11030595

A High-Precision Adaptive Thermal Network Model for Monitoring of Temperature Variations in Insulated Gate Bipolar Transistor (IGBT) Modules

1
Tianjin Key Laboratory of Control Theory & Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China
2
School of Electrical Engineering and Automation, Tianjin University, Tianjin 300072, China
*
Author to whom correspondence should be addressed.
Received: 20 January 2018 / Revised: 27 February 2018 / Accepted: 6 March 2018 / Published: 8 March 2018
View Full-Text   |   Download PDF [6525 KB, uploaded 8 March 2018]   |  

Abstract

This paper proposes a novel method for optimizing the Cauer-type thermal network model considering both the temperature influence on the extraction of parameters and the errors caused by the physical structure. In terms of prediction of the transient junction temperature and the steady-state junction temperature, the conventional Cauer-type parameters are modified, and the general method for estimating junction temperature is studied by using the adaptive thermal network model. The results show that junction temperature estimated by our adaptive Cauer-type thermal network model is more accurate than that of the conventional model. View Full-Text
Keywords: insulated gate bipolar transistor (IGBT); thermal network; parameter identification; junction temperature insulated gate bipolar transistor (IGBT); thermal network; parameter identification; junction temperature
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

An, N.; Du, M.; Hu, Z.; Wei, K. A High-Precision Adaptive Thermal Network Model for Monitoring of Temperature Variations in Insulated Gate Bipolar Transistor (IGBT) Modules. Energies 2018, 11, 595.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Energies EISSN 1996-1073 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top