Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds via Gallium Doping
Abstract
:1. Introduction
2. Experimental Procedures
3. Results and Discussion
3.1. XRD Analysis and Microstructure
3.2. Electrical Performance
3.3. Thermal Conductivity
3.4. Figure of Merit
4. Conclusions
Acknowledgments
Author Contributions
Conflicts of Interest
References
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x | κL (W m−1 K−1) | Relative Density | α (μV/K) | σ (Ω−1 cm−1) | p (1018 cm−3) | μH (cm2/Vs) | m* (m0) |
---|---|---|---|---|---|---|---|
0 | 3.19 | 98.5% | 405 | 23.2 | 1.90 | 76.2 | 1.2 |
0.005 | 2.71 | 98.7% | 244 | 50.8 | 8.01 | 39.2 | 1.4 |
0.010 | 2.54 | 98.3% | 222 | 55.9 | 9.84 | 35.5 | 1.6 |
0.015 | 2.29 | 98.8% | 208 | 62.7 | 12.7 | 30.8 | 1.5 |
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Zhao, D.; Wu, D.; Bo, L. Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds via Gallium Doping. Energies 2017, 10, 1524. https://doi.org/10.3390/en10101524
Zhao D, Wu D, Bo L. Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds via Gallium Doping. Energies. 2017; 10(10):1524. https://doi.org/10.3390/en10101524
Chicago/Turabian StyleZhao, Degang, Di Wu, and Lin Bo. 2017. "Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds via Gallium Doping" Energies 10, no. 10: 1524. https://doi.org/10.3390/en10101524