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Energies 2017, 10(10), 1524; https://doi.org/10.3390/en10101524

Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds via Gallium Doping

School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
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Received: 1 September 2017 / Revised: 17 September 2017 / Accepted: 26 September 2017 / Published: 6 October 2017
(This article belongs to the Special Issue Thermoelectric Materials for Energy Conversion)
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Abstract

In this study, the p-type Ga-doped Cu3Sb1−xGaxSe4 compounds were fabricated by melting, annealing, grinding, and spark plasma sintering (SPS). The transport properties of Ga-doped Cu3Sb1−xGaxSe4 compounds were investigated. As Ga content increased, the hole concentration of Cu3Sb1−xGaxSe4 compounds increased, which led to an increase in electrical conductivity. Meanwhile, the Seebeck coefficient of the Cu3Sb1−xGaxSe4 compounds decreased as Ga content increased. The extra phonon scattering originating from Ga-doping effectively depressed the lattice thermal conductivity of the Cu3Sb1−xGaxSe4 compounds. The ZT value of Cu3SbSe4 markedly improved, which is primarily ascribed to the depressed lattice thermal conductivity and the increased electrical conductivity. The highest ZT value for the Cu3Sb0.985Ga0.015Se4 compound was 0.54 at 650 K, which is two times higher than that of a pure Cu3SbSe4 compound. View Full-Text
Keywords: thermoelectric; Cu3SbSe4; gallium doping; spark plasma sintering thermoelectric; Cu3SbSe4; gallium doping; spark plasma sintering
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Zhao, D.; Wu, D.; Bo, L. Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds via Gallium Doping. Energies 2017, 10, 1524.

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