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Keywords = total ionising dose (TID)

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14 pages, 4480 KiB  
Article
Temperature-Dependent Dynamic on Resistance in Gamma-Irradiated AlGaN/GaN Power HEMTs
by Enrique Maset, Pedro Martín-Holgado, Yolanda Morilla, David Gilabert, Esteban Sanchis-Kilders and Pedro J. Martínez
Appl. Sci. 2022, 12(22), 11578; https://doi.org/10.3390/app122211578 - 15 Nov 2022
Viewed by 2051
Abstract
Dynamic RON is a key parameter in terms of device reliability and the efficiency of power-switching converters. In this study, commercial off-the-shelf GaN-on-Si power high-electron-mobility transistors (HEMTs) were irradiated using different regimes of accumulative gamma rays with a 60Co source of [...] Read more.
Dynamic RON is a key parameter in terms of device reliability and the efficiency of power-switching converters. In this study, commercial off-the-shelf GaN-on-Si power high-electron-mobility transistors (HEMTs) were irradiated using different regimes of accumulative gamma rays with a 60Co source of photon energy (1.33 MeV), while a base temperature of 53 °C and 133 °C during the irradiation test was applied. This test campaign had the objective of investigating how the combination of gamma irradiation and temperature affects dynamic on-resistance (RON) behaviour. The results indicated that gate voltage bias stress affected the degradation of dynamic on-resistance when irradiation was applied, and that temperature was an accelerating factor in dynamic on-resistance degradation. Finally, we obtained a partial reduction in dynamic RON when a total ionising dose of around 140 krad(SiO2) was applied and the base temperature during the irradiation test was not high. Full article
(This article belongs to the Special Issue Robustness and Reliability of GaN Technology in Power Switching Applications)
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12 pages, 2180 KiB  
Article
Diagnosis of Faults Induced by Radiation and Circuit-Level Design Mitigation Techniques: Experience from VCO and High-Speed Driver CMOS ICs Case Studies
by Danilo Monda, Gabriele Ciarpi and Sergio Saponara
Electronics 2021, 10(17), 2144; https://doi.org/10.3390/electronics10172144 - 3 Sep 2021
Cited by 2 | Viewed by 3056
Abstract
In this paper, we discuss the diagnosis of particle-induced failures in harsh environments such as space and high-energy physics. To address these effects, simulation-before-test and simulation-after-test can be the key points in choosing which radiation hardening by design (RHBD) techniques can be implemented [...] Read more.
In this paper, we discuss the diagnosis of particle-induced failures in harsh environments such as space and high-energy physics. To address these effects, simulation-before-test and simulation-after-test can be the key points in choosing which radiation hardening by design (RHBD) techniques can be implemented to mitigate or prevent failures. Despite the fact that total ionising dose (TID) has slow but destructive effects overtime on silicon devices, single-event effect (SEE) impulsively disrupts the typical operation of a circuit with temporary or permanent effects. The recently released SpaceFibre protocol drives the current requirements for space applications, and the future upgrade of the LHC experiment scheduled by CERN will require a redesign of the electronic front-end to sustain a radiation level up to the 1 Grad TID level. The effects that these two environments have on two different architectures for high-radiation and high-frequency data transmission are reported, and the efficiency of the mitigation techniques implemented, based on simulations and measurement tests, in the commercial 65 nm technology, are exploited. Full article
(This article belongs to the Special Issue Diagnosis in Analog Electronic Circuits, Electrical Power Systems and Smart Grids)
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