Search Results (14)

We demonstrate a narrow-linewidth, high side-mode suppression ratio (SMSR) semiconductor laser based on the external optical feedback injection locking technology of a femtosecond-apodized (Fs-apodized) fiber Bragg grating (FBG). A single frequency output is achieved by coupling and integrating a wide-gain quantum dot (QD) gain chip with a Fs-apodized FBG in a 1-μm band. We propose this low-cost and high-integration scheme for the preparation of a series of single-frequency seed sources in this wavelength range by characterizing the performance of 1030 nm and 1080 nm lasers. The lasers have a maximum SMSR of 66.3 dB and maximum output power of 134.6 mW. Additionally, the lasers have minimum Lorentzian linewidths that are measured to be 260.5 kHz; however, a minimum integral linewidth less than 180.4 kHz is observed by testing and analyzing the power spectra of the frequency noise values of the lasers. Full article

We studied the antimicrobial effect of gold quantum dots (AuQDs), femtosecond laser irradiation, and the combined effect of laser irradiation and AuQD treatment against common infectious eye pathogens. The INSPIRE HF100 laser system (Spectra Physics) provided a femtosecond laser, which was pumped by a mode-locked femtosecond Ti: sapphire laser MAI TAI HP (Spectra Physics), while a Quanta-Ray nanosecond Nd: YAG laser (Spectra-Physics) was used to precisely synthesize 7.8, 8.7, and 11.6 nm spherical AuQDs. Then, the in vitro growth kinetics and growth rate analysis of E. coli, methicillin-resistant Staphylococcus aureus, Enterococcus faecalis, Listeria monocytogenes, and Candida albicans (treated with the AuQDs, femtosecond laser irradiation, or combined laser and AuQDs treatment) was measured. The biocompatibility of the AuQDs with the retinal epithelial cell lines (ARPE-19) and their toxicity to the cells was assayed. The results showed that (1) in vitro irradiation using a 159 J/cm² energy density obtained from the 400 nm femtosecond laser suppressed the growth of each of the five pathogens. (2) Similarly, treatment with the AuQDs was antimicrobial against the four bacteria. The AuQDs with an average size of 7.8 nm were more highly antimicrobial and biocompatible and were less cytotoxic than the larger AuQD sizes. (3) The combined femtosecond laser irradiation and AuQD treatment was more highly antimicrobial than each treatment alone. (4) The AuQD treatment did not impair the rate of wound closure in vitro. These findings suggest that combined femtosecond laser irradiation and AuQD treatment is significantly antimicrobial against Candida albicans, Gram-positive L. monocytogenes, S. aureus, and E. faecalis, as well as Gram-negative E. coli. The nontoxicity and biocompatibility of the AuQD particles tested suggest that this form of treatment may be clinically viable. Full article

Herein, a PbSe quantum dot-doped-mode-locked fiber laser is experimentally demonstrated. A PbSe quantum dot-doped fiber is prepared using a melting method and induced as a gain medium in our mode-locked fiber laser. By increasing the pump power, a stable pulse train is obtained with a pulse duration of 36 ps, a pulse repetition rate of 4.5 MHz, an average laser power of 9.8 mW, and a central wavelength of 1214.5 nm. The pulse duration can be changed by adjusting the PC or increasing the pump power. The maximum laser power obtained was 42.7 mW under the pump power of 800 mW. Our results prove that a quantum dot-doped-mode-locked fiber laser is achievable, which provides a new scheme to solve wavelength problem of rare-earth-doped mode-locked fiber lasers. Full article

Various potential applications of quantum dots (QDs) require knowledge of their optical nonlinearities. In this review, the third-order nonlinearities responsible for the saturable absorption, two-photon absorption, reverse saturable absorption, and nonlinear refraction in QDs, as well as the high-order harmonics generation in the laser-induced plasmas containing QDs, are analyzed. The methods of QD synthesis and preparation strongly affect their optical nonlinearities. Above-mentioned nonlinear optical studies in QDs are analyzed for various potential applications (sources of coherent extreme ultraviolet radiation, optical limiters, mode-lockers, etc.). Full article

Diode optical frequency comb lasers are promising compact solutions to generate high-speed optical pulses for applications in high spectral efficiency wavelength division multiplexing transmission with advanced modulation formats. In this paper, an InAs/InP quantum dot (QDot) C-band single-section passively mode-locked laser (MLL) based broadband optical frequency comb source with a free spectral range of 28.4 GHz is presented. The device exhibits less than 1.5 MHz optical linewidth (phase noise) over 56 channels and 2.1 fs pulse-to-pulse timing jitter with a central wavelength of 1550 nm. Using this comb, we demonstrate an aggregate data transmission capacity of 12.5 Terabit/s over 100 km of standard single mode fiber by employing dual-polarization with 16 QAM modulation format. This investigation shows the viability for semiconductor QDot MLLs to be used as low-cost optical source in Terabit/s or higher optical networks. Full article

As a member of the transition metal nitride material family, titanium nitride (TiN) quantum dots (QDs) have attracted great attention in optical and electronic fields because of their excellent optoelectronic properties and favorable stability. Herein, TiN QDs were synthesized and served as a saturable absorber (SA) for an ultrafast fiber laser. Due to the strong nonlinear optical absorption characteristics with a modulation depth of ~33%, the typical fundamental mode-locked pulses and harmonics mode-locked pulses can be easily obtained in an ultrafast erbium-doped fiber laser with a TiN-QD SA. In addition, at the maximum pump power, harmonic mode-locked pulses with a repetition rate of ~1 GHz (164th order) and a pulse duration of ~1.45 ps are achieved. As far as we know, the repetition rate is the highest in the ultrafast fiber laser using TiN QDs as an SA. Thus, these experimental results indicate that TiN QDs can be considered a promising material, showing more potential in the category of ultrafast laser and nonlinear optics. Full article

Transition metal carbides and nitrides (MXenes) have attracted significant attention in photoelectric applications due to their highly tunable electronic and optical properties influenced by a flexible compositional or surface functional group regulation. Ti₃C₂T_x MXenes (-F, -OH, =O terminated) used in previous ultrafast photonic studies are usually synthesized via a generic hydrofluoric acid (HF) etching strategy, which may cause numerous defects and thus impedes the optoelectronic properties of Ti₃C₂T_x. In this contribution, inspired by a much higher conductivity and carrier mobility of Ti₃C₂T_x (-F, -OH, =O, -Cl terminated) prepared from a minimally intensive layer delamination method (MILD) etching strategy, we further optimized it with a liquid-phase exfoliation (LPE) method to synthesize pure Ti₃C₂T_x quantum dots (QDs) for ultrafast photonic. Compared to the other QDs saturable absorber (SA) devices performed at 1550 nm, our SA device exhibited a relatively low saturation intensity (1.983 GW/cm⁻²) and high modulation depth (11.6%), allowing for a more easily mode-locked pulse generation. A distinguished ultrashort pulse duration of 466 fs centered at the wavelength of 1566.57 nm with a fundamental frequency of 22.78 MHz was obtained in the communication band. Considering the SA based on such a Ti₃C₂T_x QDs tapered fiber is the first exploration of Er³⁺-doped fiber laser (EDFL), this work will open up a new avenue for applications in ultrafast photonics. Full article

Quantum dot lasers are an attractive option for light sources in silicon photonic integrated circuits. Thanks to the three-dimensional charge carrier confinement in quantum dots, high material gain, low noise and large temperature stability can be achieved. This paper discusses, both theoretically and experimentally, the advantages of silicon-based quantum dot lasers for passive mode-locking applications. Using a frequency domain approach, i.e., with the laser electric field described in terms of a superposition of passive cavity eigenmodes, a precise quantitative description of the conditions for frequency comb and pulse train formation is supported, along with a concise explanation of the progression to mode locking via Adler’s equation. The path to transform-limited performance is discussed and compared to the experimental beat-note spectrum and mode-locked pulse generation. A theory/experiment comparison is also used to extract the experimental group velocity dispersion, which is a key obstacle to transform-limited performance. Finally, the linewidth enhancement contribution to the group velocity dispersion is investigated. For passively mode-locked quantum dot lasers directly grown on silicon, our experimental and theoretical investigations provide a self-consistent accounting of the multimode interactions giving rise to the locking mechanism, gain saturation, mode competition and carrier-induced refractive index. Full article

Owing to their high integration and functionality, nanometer-scale optoelectronic devices based on III-V semiconductor materials are emerging as an enabling technology for fiber-optic communication applications. Semiconductor quantum dots (QDs) with the three-dimensional carrier confinement offer potential advantages to such optoelectronic devices in terms of high modulation bandwidth, low threshold current density, temperature insensitivity, reduced saturation fluence, and wavelength flexibility. In this paper, we review the development of the molecular beam epitaxial (MBE) growth methods, material properties, and device characteristics of semiconductor QDs. Two kinds of III-V QD-based lasers for optical communication are summarized: one is the active electrical pumped lasers, such as the Fabry–Perot lasers, the distributed feedback lasers, and the vertical cavity surface emitting lasers, and the other is the passive lasers and the instance of the semiconductor saturable absorber mirrors mode-locked lasers. By analyzing the pros and cons of the different QD lasers by their structures, mechanisms, and performance, the challenges that arise when using these devices for the applications of fiber-optic communication have been presented. Full article

The trend of data center transceivers is to increase bandwidth while simultaneously decreasing their size, power consumption, and cost. While data center links have previously relied on vertical-cavity surface-emitting lasers (VCSELs) or in-plane lasers using coarse wavelength division multiplexing (WDM) to encode data, recently, dense WDM (DWDM) has moved to the forefront for next-generation links. Several approaches exist as light sources for DWDM links; DFB arrays, nonlinear microcombs, and semiconductor mode-locked lasers (MLLs). This paper focuses on quantum dot MLLs (QDMLLs), which currently offer the best efficiency, simplicity, and size. The efficiency of optical combs generated by QDMLLs is analyzed in depth in this study. Full article

We report measurements of the saturated intensities, saturable absorption, and nonlinear refraction in 70-nm thick films containing 4 nm HgTe quantum dots. We demonstrate strong nonlinear refraction and saturable absorption in the thin films using tunable picosecond and femtosecond pulses. Studies were carried out using tunable laser pulses in the range of 400–1100 nm. A significant variation of the nonlinear refraction along this spectral range was demonstrated. The maximal values of the nonlinear absorption coefficients and nonlinear refractive indices determined within the studied wavelength range were −2.4 × 10⁻⁵ cm² W⁻¹ (in the case of 28 ps, 700 nm probe pulses) and −3 × 10⁻⁹ cm² W⁻¹ (in the case of 28 ps, 400 nm probe pulses), respectively. Our studies show that HgTe quantum dots can be used in different fields e.g., as efficient emitters of high-order harmonics of ultrashort laser pulses or as laser mode-lockers. Full article

This paper presents a new scheme of a cost-effective tunable millimeter-wave (MMW) frequency synthesizer based on an ultra-wideband electro-optic frequency comb. The architecture for the quasi-tunable millimeter-wave frequency synthesizer mainly consists of a compact ultra-wide flat electro-optic frequency comb and a multi-tone frequency generator, which only includes a quantum dot mode-locked laser, a LiNbO${}_3$ dual-driving Mach–Zehnder modulator (DD-MZM) and Uni-traveling-carrier photodiode (UTC-PD). MMW signals generated with a quasi-tunable frequency are experimentally demonstrated. The difference in power is obtained for the different frequencies. The linewidth of the quasi-tunable frequency signals is less than 273 Hz. In addition, the single side band (SSB) phase noise of the 25, 37.5, 50 and 75 GHz is measured as −115, −106, −102 and −95 dBc/Hz at an offset of 1 kHz, respectively. The proposed frequency synthesizer has ultra-low phase noise, quasi-tunable frequency and simple structure. The research results of the frequency synthesizer are applied for 5G+ transmission with radio wave working at K-band and V-band. The flexible, compact and robust MMW frequency synthesizer is suitable for the future of ultra-high capacity 5G+ communication. Full article

PbS quantum dots (QDs), a representative zero-dimensional material, have attracted great interest due to their unique optical, electronic, and chemical characteristics. Compared to one- and two-dimensional materials, PbS QDs possess strong absorption and an adjustable bandgap, which are particularly fascinating in near-infrared applications. Here, fiber-based PbS QDs as a saturable absorber (SA) are studied for dual-wavelength ultrafast pulses generation for the first time to our knowledge. By introducing PbS QDs SA into an erbium-doped fiber laser, the laser can simultaneously generate dual-wavelength conventional solitons with central wavelengths of 1532 and 1559 nm and 3 dB bandwidths of 2.8 and 2.5 nm, respectively. The results show that PbS QDs as broadband SAs have potential application prospects for the generation of ultrafast lasers. Full article

Wavelength−tunable semiconductor quantum−dot lasers have achieved impressive performance in terms of high−power, broad tunability, low threshold current, as well as broadly tunable generation of ultrashort pulses. InAs/GaAs quantum−dot−based lasers in particular have demonstrated significant versatility and promise for a range of applications in many areas such as biological imaging, optical fiber communications, spectroscopy, THz radiation generation and frequency doubling into the visible region. In this review, we cover the progress made towards the development of broadly−tunable quantum−dot edge−emitting lasers, particularly in the spectral region between 1.0–1.3 µm. This review discusses the strategies developed towards achieving lower threshold current, extending the tunability range and scaling the output power, covering achievements in both continuous wave and mode−locked InAs/GaAs quantum−dot lasers. We also highlight a number of applications which have benefitted from these advances, as well as emerging new directions for further development of broadly−tunable quantum−dot lasers. Full article